Strain-compensated effect on the growth of InGaN/AlGaN multi-quantum well by metalorganic vapor phase epitaxy

Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

  Doi, Tomohiro ^a   Honda, Yoshio ^a   Yamaguchi, Masahito ^a   Amano, Hiroshi ^a  

^a NAGOYA UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; BARRIER LAYERS; EMISSION WAVELENGTH; IN COMPOSITIONS; INGAN/GAN; MULTIQUANTUM WELLS; STRAIN-COMPENSATED; V-DEFECTS;

EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; VAPORS;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84883191690     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.7567/JJAP.52.08JB14     Document Type: Article

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