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Volumn 109, Issue 9, 2011, Pages

Design strategies for mitigating the influence of polarization effects on GaN-based multiple quantum well light-emitting diodes

(2) Lu, H M a Chen, G X a

a BEIJING JIAOTONG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYSIS AND SIMULATION; BARRIER MATERIAL; BARRIER THICKNESS; DESIGN PARAMETERS; DESIGN STRATEGIES; EFFECTIVE-MASS EQUATION; EFFECTS OF STRAINS; EMISSION SPECTRUMS; GAN-BASED DEVICES; NUMERICAL RESULTS; OPTOELECTRONIC PROPERTIES; POISSON'S EQUATION; POLARIZATION EFFECT; THEORETICAL MODELS; VALENCE BAND MIXING; WELL WIDTH;

DESIGN; EMISSION SPECTROSCOPY; GALLIUM ALLOYS; GALLIUM NITRIDE; LIGHT EMISSION; OPTICAL PROPERTIES; ORGANIC LIGHT EMITTING DIODES (OLED); POISSON EQUATION; POLARIZATION;

SEMICONDUCTOR QUANTUM WELLS;

EID: 79959502053 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3580510 Document Type: Article

Times cited : (28)

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