Growth of strain-compensated InGaN/AlN multiple quantum wells on GaN by MOVPE

Journal of Crystal Growth

Volumn 370, Issue , 2013, Pages 82-86

  Anazawa, Kazehiko ^a   Hassanet, Sodabanlu ^b   Fujii, Katsushi ^b   Nakano, Yoshiaki ^a,b   Sugiyama, Masakazu ^a  

^a UNIVERSITY OF TOKYO   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; A3. Quantum wells; B1. Nitrides; B2. Semiconducting iii v materials; B3. Infrared devices; B3. Solar cells

Indexed keywords

GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SEMICONDUCTING INDIUM COMPOUNDS; STRAIN;

GROWTH CONDITIONS; LAYER THICKNESS; PHOTOLUMINESCENCE MEASUREMENTS; RECIPROCAL SPACE MAPPING; SEMI CONDUCTING III-V MATERIALS; STRAIN ACCUMULATIONS; STRAIN ESTIMATION; STRAIN-COMPENSATED;

SEMICONDUCTOR QUANTUM WELLS;

EID: 84883202721     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2012.08.050     Document Type: Article

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