Detecting response of microelectromechanical resonators by microwave reflectometry

Applied Physics Letters

Volumn 103, Issue 5, 2013, Pages

  Legrand, B ^a   Ducatteau, D ^a   Theron D ^a   Walter, B ^a   Tanbakuchi, H ^b  

^a INSTITUT D ELECTRONIQUE   (France)

^b AGILENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE VARIATION; ELECTRICAL DETECTION; HIGH SIGNAL-TO-NOISE RATIO; MEASUREMENT TECHNIQUES; MICROELECTROMECHANICAL RESONATORS; MICROWAVE REFLECTOMETRY; RESONANCE FREQUENCIES; VIBRATION AMPLITUDE;

CAPACITANCE; REFLECTION; REFLECTOMETERS; TRANSDUCERS;

MICROWAVE RESONATORS;

EID: 84882296939     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4817411     Document Type: Article

References (29)

1. S. J. Sherman, W. K. Tsang, T. A. Core, R. S. Payne, D. E. Quinn, K. H.-L. Chau, J. A. Farash, and S. K. Baum, in Proceedings of International Electron Devices Meeting, San Francisco (IEEE, 1992), p. 501.
2. M. Lutz, W. Golderer, J. Gerstenmeier, J. Marek, B. Maihofer, S. Mahler, H. Munzel, and U. Bischof, in Proceedings of the International Conference on Solid-State Sensors, Actuators and Microsystems, Chicago (IEEE, 1997), p. 847.
3. P. F. Van Kessel, L. J. Hornbeck, R. E. Meier, and M. R. Douglas, Proc. IEEE 86 (8), 1687 (1998). 10.1109/5.704274
4. G. M. Rebeiz and J. B. Muldavin, IEEE Microw. Mag. 2 (4), 59 (2001). 10.1109/6668.969936
5. C. Yamahata, D. Collard, B. Legrand, T. Takekawa, M. Kumemura, G. Hashiguchi, and H. Fujita, J. Microelectromech. Syst. 17 (3), 623 (2008). 10.1109/JMEMS.2008.922080
6. W. C. Tang, T.-C. H. Nguyen, and R. T. Howe, Sens. Actuators 20 (1-2), 25 (1989). 10.1016/0250-6874(89)87098-2
7. J. R. Clark, W. T. Hsu, and C. T.-C. Nguyen, in Proceedings of the International Electron Devices Meeting, San Francisco (IEEE, 2000), p. 493.
8. S. Pourkamali, Z. Hao, and F. Ayazi, J. Microelectromech. Syst. 13, 1054 (2004). 10.1109/JMEMS.2004.838383
9. M. Sworowski, F. Neuilly, B. Legrand, A. Summanwar, P. Philippe, and L. Buchaillot, IEEE Electron Device Lett. 31 (1), 23 (2010). 10.1109/LED.2009. 2034542
10. G. Stemme, J. Micromech. Microeng. 1 (2), 113 (1991). 10.1088/0960-1317/1/2/004
11. N. Yazdi, F. Ayazi, and K. Najafi, Proc. IEEE 86 (8), 1640 (1998). 10.1109/5.704269
12. B. Ilic, H. G. Craighead, S. Krylov, W. Senaratne, C. Ober, and P. Neuzil, J. Appl. Phys. 95 (7), 3694 (2004). 10.1063/1.1650542
13. Y. T. Yang, C. Callegari, X. L. Feng, K. L. Ekinci, and M. L. Roukes, Nano lett. 6 (4), 583 (2006). 10.1021/nl052134m
14. R. T. Howe and R. S. Muller, in Proceedings of the International Electron Devices Meeting, San Francisco (IEEE, 1984), p. 213.
15. T. P. Burg and S. R. Manalis, Appl. Phys. Lett. 83 (13), 2698 (2003). 10.1063/1.1611625
16. J. L. Arlett, E. B. Myers, and M. L. Roukes, Nat. Nanotechnol. 6, 203 (2011). 10.1038/nnano.2011.44
17. S. C. Minne, S. R. Manalis, and C. F. Quate, Appl. Phys. Lett. 67 (26), 3918 (1995). 10.1063/1.115317
18. E. Algré, Z. Xiong, M. Faucher, B. Walter, L. Buchaillot, and B. Legrand, J. Microelectromech. Syst. 21 (2), 385 (2012). 10.1109/JMEMS.2011. 2179012
19. D. J. Bell, T. J. Lu, N. A. Fleck, and S. M. Spearing, J. Micromech. Microeng. 15 (7), S153 (2005). 10.1088/0960-1317/15/7/022
20. W. T. Hsu, J. R. Clark, and C. T.-C. Nguyen, in Proceedings of the International Conference on MicroElectroMechanical Systems, Interlaken (IEEE, 2001), p. 349.
21. J. R. Clark, W. T. Hsu, M. A. Abdelmoneum, and C. T.-C. Nguyen, J. Microelectromech. Syst. 14 (6), 1298 (2005). 10.1109/JMEMS.2005.856675
22. P. A. Truitt, J. B. Hertzberg, C. C. Huang, K. L. Ekinci, and K. C. Schwab, Nano Lett. 7 (1), 120 (2007). 10.1021/nl062278g
23. C. Durand, F. Casset, P. Renaux, N. Abelé, B. Legrand, D. Renaud, E. Ollier, P. Ancey, A. M. Ionescu, and L. Buchaillot, IEEE Electron Device Lett. 29 (5), 494 (2008). 10.1109/LED.2008.919781
24. H. A. C. Tilmans, J. Micromech. Microeng. 7 (4), 285 (1997). 10.1088/0960-1317/7/4/005
25. S. D. Senturia, Microsystem Design (Kluwer Academic, Boston, 2002).
26. A. S. Ramo, J. R. Whinnery, and T. Van Duzer, Fields and Waves in Communication Electronics (Wiley, New York, 1994).
27. B. Walter, M. Faucher, E. Algré, B. Legrand, R. Boisgard, J. P. Aimé, and L. Buchaillot, J. Micromech. Microeng. 19 (11), 115009 (2009). 10.1088/0960-1317/19/11/115009
28. B. Walter, M. Faucher, E. Mairiaux, Z. Xiong, L. Buchaillot, and B. Legrand, in Proceedings of the International Conference on MicroElectroMechanical Systems, Cancun (IEEE, 2011), p. 517.
29. Calculation of the electrostatic force assumes a parallel plate capacitor, neglects fringe effects and takes into account a correction due to the DUT vibration mode shape.