Fabrication of 24-MHz-disk resonators with silicon passive integration technology

IEEE Electron Device Letters

Volumn 31, Issue 1, 2010, Pages 23-25

  Sworowski, Marc ^a   Neuilly, François ^a   Legrand, Bernard ^b   Summanwar, Anand ^a   Philippe, Pascal ^a   Buchaillot, Lionel ^b  

^a NXP SEMICONDUCTORS   (France)

^b Institut d'Electronique   (France)

Author keywords

Bulk micromachining; Microelectromechanical systems (MEMS); Microresonator; Single crystal silicon

Indexed keywords

BULK- MICROMACHINING; DISK RESONATOR; INDUSTRIAL FACILITIES; MICRO RESONATORS; MICROELECTROMECHANICAL SYSTEMS; MOTIONAL RESISTANCE; NEW APPROACHES; PASSIVE COMPONENTS; PASSIVE INTEGRATION TECHNOLOGY; QUALITY FACTORS; SINGLE CRYSTAL SILICON; SOI SUBSTRATES;

DISKS (STRUCTURAL COMPONENTS); MECHATRONICS; MEMS; MICROELECTROMECHANICAL DEVICES; MICROMACHINING; RESONATORS;

COMPOSITE MICROMECHANICS;

EID: 72949115065     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2034542     Document Type: Article

References (9)

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