Temperature dependence of electrical resistivity (4-300 K) in aluminum- and boron-doped SiC ceramics

Journal of the American Ceramic Society

Volumn 96, Issue 8, 2013, Pages 2525-2530

  Kim, Kwang Joo ^a   Lim, Kwang Young ^b   Kim, Young Wook ^b   Kim, Hyoung Chan ^c  

^a Konkuk University   (South Korea)

^b University of Seoul   (South Korea)

^c National Fusion Research Institute   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER COMPENSATION; ELECTRICAL RESISTIVITY DATUM; HIGH RESISTIVITY; PHOTOLUMINESCENCE INVESTIGATION; ROOM TEMPERATURE; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT; ZINC BLENDE LATTICE;

CERAMIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRON PROBE MICROANALYSIS; SILICON CARBIDE;

ALUMINUM;

EID: 84881664284     PISSN: 00027820     EISSN: 15512916     Source Type: Journal    
DOI: 10.1111/jace.12351     Document Type: Article

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