Electrical properties of nitrogen-doped pressureless sintered SiC

Journal of the Ceramic Society of Japan

Volumn 107, Issue 8, 1999, Pages 757-761

  Kondo, Akira ^a   Kitahama, Hiroaki ^b  

^a Tokai Carbon USA Inc   (United States)

^b Research and Development Dept   (Japan)

Author keywords

Crystal phase; Electrical properties; Nitrogen doping; Pressureless sintered SiC

Indexed keywords

ADDITIVES; BORON; CARBON; CRYSTALLIZATION; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY OF SOLIDS; ELECTRIC RESISTANCE; ELECTRON DIFFRACTION; NITROGEN; SINTERING; THERMAL EFFECTS; X RAY DIFFRACTION ANALYSIS;

PRESSURELESS SINTERING;

SILICON CARBIDE;

EID: 0033330448     PISSN: 09145400     EISSN: None     Source Type: Journal    
DOI: 10.2109/jcersj.107.757     Document Type: Article

References (15)

1. K. Sumi and K. Nakagawa, "Hikinzoku-Hatsunetsutai," Shin-Nihon-Chutanzo-Kyokai (1990) pp. 1-47 [in Japanese].
2. S. Prochazka, "Special Ceramics 6," Ed. by P. Popper, British Ceramic Research Association, Stoke-on-Trent (1975) pp. 171-82.
3. K. Koumoto, Sentangijutsu-Hairaito, 43, 1-5 (1987) [in Japanese].
4. K. Fueki, Y. Ban and K. Kitazawa, "Denshizairyo no Kagaku," Maruzen (1981) pp. 13-26 [in Japanese].
5. A. Kondo, J. Ceram. Soc. Japan, 100, 1225-29 (1992) [in Japanese].
6. T. Hase, T. Egashira, T. Iseki and H. Suzuki, J. Ceram. Soc. Japan (Yogyo-Kyokai-shi), 88, 56-57 (1980) [in Japanese].
7. T. Kawamura, Mineralogical J., 4, 333-55 (1965).
8. A. H. Heuer, G. A. Fryburg, L. U. Ogbuji, T. E. Mitchell and S. Shinozaki, J. Am. Ceram. Soc., 61, 406-12 (1978).
9. H. Tanaka, "Tankakeiso to Chikkakeiso oyobi Seramikkusu-Senikyoka," TIC (1992) pp. 42-52 [in Japanese].
10. R. Kieffer, E. Gugel, P. Ettmayer and A. Schmidt, Ber. Deut. Keram. Ges., 43, 621-23 (1966).
11. N. W. Jepps and T. F. Page, J. Am Ceram. Soc., 64, C177-78 (1981).