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Volumn 54, Issue 16, 2006, Pages 4273-4283

Laser-enhanced diffusion of nitrogen and aluminum dopants in silicon carbide

Author keywords

Excimer laser; Laser doping; Laser enhanced diffusion; Nd:YAG laser; Silicon carbide

Indexed keywords

ALUMINUM; DIFFUSION; DOPING (ADDITIVES); EXCIMER LASERS; MATHEMATICAL MODELS; NITROGEN;

EID: 33747591888     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2006.05.020     Document Type: Article
Times cited : (59)

References (20)
  • 5
    • 18144397229 scopus 로고    scopus 로고
    • Zetterling C.-M. (Ed), INSPEC, Institution of Electrical Engineers, London
    • Schöner A. In: Zetterling C.-M. (Ed). Process technology for silicon carbide devices (2002), INSPEC, Institution of Electrical Engineers, London 75
    • (2002) Process technology for silicon carbide devices , pp. 75
    • Schöner, A.1
  • 14
    • 33747607977 scopus 로고    scopus 로고
    • Salama IA. Ph.D. dissertation, University of Central Florida; 2003.
  • 20
    • 0003973615 scopus 로고
    • Wiley, New York (NY) p. 259
    • Özi{dotless}şi{dotless}k M.N. Heat conduction (1980), Wiley, New York (NY) p. 259
    • (1980) Heat conduction
    • Özişik, M.N.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.