Microstructural changes in liquid-phase-sintered silicon carbide during creep in an oxidizing environment

Journal of the American Ceramic Society

Volumn 86, Issue 3, 2003, Pages 501-507

  Schneider, Judy ^a   Biswas, Koushik ^b   Rixecker, Georg ^b   Aldinger, Fritz ^b  

^a MISSISSIPPI STATE UNIVERSITY   (United States)

^b UNIVERSITY OF STUTTGART   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITIVES; ANNEALING; CRACK INITIATION; CREEP; CRYSTAL MICROSTRUCTURE; CRYSTALLIZATION; GRAIN BOUNDARIES; HIGH TEMPERATURE EFFECTS; LIQUID PHASE EPITAXY; OXIDATION; PHASE TRANSITIONS; SINTERING;

BLISTERING; CREEP RESISTANCE; OXIDIZING ENVIRONMENT; OXYNITRIDE;

SILICON CARBIDE;

EID: 0037350521     PISSN: 00027820     EISSN: None     Source Type: Journal    
DOI: 10.1111/j.1151-2916.2003.tb03328.x     Document Type: Article

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