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Volumn 34, Issue 4, 2008, Pages 845-848

Improvement of piezoresistance properties of silicon carbide ceramics through co-doping of aluminum nitride and nitrogen

Author keywords

Acceptor; Co doping; Donor; HIP; Silicon carbide; Strain sensor

Indexed keywords

ALUMINUM COMPOUNDS; DOPING (ADDITIVES); HOT ISOSTATIC PRESSING; LATTICE CONSTANTS; SILICON CARBIDE;

ACCEPTORS; DONORS; PIEZORESISTANCE PROPERTIES; STRAIN SENSORS;

CERAMIC MATERIALS;

EID: 42649145436 PISSN: 02728842 EISSN: None Source Type: Journal
DOI: 10.1016/j.ceramint.2007.09.033 Document Type: Article

Times cited : (5)

References (9)

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2
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- Monitoring of indentation and bending fracture in α-SiC ceramics utilizing electrical methods
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- Kishimoto, A.¹ Nakamichi, A.² Nakamura, Y.³

3
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- Fabrication and piezoresistive effect of silicon carbide ceramics
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- Toyoguchi, G.¹ Kishimoto, A.²

4
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- Effect of aluminium addition on piezoresistance coefficient of beta-silicon carbide ceramics
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- Toyoguchi, G.¹ Kishimoto, A.²

5
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- Role of aluminum on fabrication and piezoresistive effect of silicon carbide ceramics
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- Piezoresistivity of high-NICALON S SiC base fiber
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7
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- Piezoresistance properties of α-silicon carbide ceramics doped with nitrogen
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8
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- High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements
- Kishimoto A., Mutaguchi D., Hayashi H., and Numata Y. High temperature piezoresistance properties of 6H-SiC ceramics doped with trivalent elements. J. Mater. Sci. Eng. B 135 2 (2006) 145-149
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9
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- Piezoresistance properties of silicon carbide ceramics doped with trivalent element and nitrogen
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.