Electrical resistivity of silicon carbide ceramics sintered with 1wt% aluminum nitride and rare earth oxide

Journal of the European Ceramic Society

Volumn 32, Issue 16, 2012, Pages 4427-4434

  Kim, Young Wook ^a   Lim, Kwang Young ^a   Kim, Kwang Joo ^b  

^a University of Seoul   (South Korea)

^b Konkuk University   (South Korea)

Author keywords

Electrical properties; Hot pressing; Microstructure final; Nitrogen doping; SiC

Indexed keywords

ADDITIVE COMPOSITION; ELECTRICAL RESISTIVITY; FACETED GRAINS; JUNCTION AREA; LIQUID PHASE; MICROSTRUCTURE-FINAL; MOLAR RATIO; NANO-SIZED; NITROGEN-DOPED; NITROGEN-DOPING; RARE EARTH OXIDE; SIC; SIC CERAMICS; SIC GRAINS; SILICON CARBIDE CERAMIC; THEORETICAL DENSITY; WEAK INTERFACE;

ADDITIVES; ALUMINUM NITRIDE; CERAMIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; ERBIUM; EUROPIUM; GADOLINIUM; HOLMIUM; SINTERING;

SILICON CARBIDE;

EID: 84866769390     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2012.07.021     Document Type: Article

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