SCOPUS 정보 검색 플랫폼

Volumn 103, Issue 3, 2013, Pages

Determination of band alignment of pulsed-laser-deposited perovskite titanate/III-V semiconductor heterostructure using X-ray and ultraviolet photoelectron spectroscopy

(3) Yang, Zhibin a Huang, Wen a Hao, Jianhua a

a HONG KONG POLYTECHNIC UNIVERSITY (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BAND OFFSET; ENERGY BAND DISCONTINUITIES; ENERGY-BAND DIAGRAM; INTERMEDIATE LAYERS; PEROVSKITE TITANATES; SEMICONDUCTOR HETEROSTRUCTURE; TYPE II BAND ALIGNMENTS; VALENCE BAND OFFSETS;

ALIGNMENT; BAND STRUCTURE; GALLIUM ARSENIDE; INTERFACE STATES; INTERFACES (MATERIALS); PULSED LASERS; REACTION INTERMEDIATES; SEMICONDUCTOR LASERS; ULTRAVIOLET PHOTOELECTRON SPECTROSCOPY;

HETEROJUNCTIONS;

EID: 84881540143 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4816356 Document Type: Article

Times cited : (13)

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