Strain relaxation during in situ growth of SrTiO3 thin films

Applied Physics Letters

Volumn 83, Issue 22, 2003, Pages 4592-4594

  Peng, Luke S J ^a   Xi, X X ^a,c   Moeckly, Brian H ^a   Alpay, S P ^b  

^a SUPERCONDUCTOR TECHNOLOGIES INC   (United States)

^b UNIVERSITY OF CONNECTICUT   (United States)

^c PENNSYLVANIA STATE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; EVAPORATION; FILM GROWTH; LANTHANUM COMPOUNDS; LATTICE CONSTANTS; MAGNESIA; REFLECTION HIGH ENERGY ELECTRON DIFFRACTION; RELAXATION PROCESSES; STOICHIOMETRY; STRONTIUM COMPOUNDS; SUBSTRATES; THERMAL EFFECTS;

STRAIN RELAXATION; STRONTIUM TITANATE THIN FILMS;

FERROELECTRIC THIN FILMS;

EID: 0347477190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1631055     Document Type: Article

References (29)

1. W. J. Kim, W. Chang, S. B. Qadri, J. M. Pond, S. W. Kirchoefer, D. B. Chrisey, and J. S. Horwitz, Appl. Phys. Lett. 76, 1185 (2000).
2. N. A. Pertsev, A. K. Tagantsev, and N. Setter, Phys. Rev. B 35, 825 (2000).
3. C. L. Canedy, H. Li, S. P. Alpay, L. Salamanca-Riba, A. L. Roytburd, and R. Ramesh, Appl. Phys. Lett. 77, 1695 (2000).
4. S. K. Streiffer, C. Basceri, C. B. Parker, S. E. Lash, and A. I. Kingon, J. Appl. Phys. 86, 4565 (1999).
5. T. R. Taylor, P. J. Hansen, B. Acikel, N. Pervez, R. A. York, S. K. Streiffer, and J. S. Speck, Appl. Phys. Lett. 80, 1978 (2002).
6. E. J. Tarsa, E. A. Hachfeld, F. T. Quinlan, J. S. Specka, and M. Eddy, Appl. Phys. Lett. 68, 490 (1996).
7. B. H. Moeckly and Y. M. Zhang, IEEE Trans. Appl. Supercond. 11, 450 (2001).
8. L. S.-J. Peng, N. F. Heinig, and B. H. Moeckly, Mater. Res. Soc. Symp. Proc. 688, 211 (2002)
9. L. S.-J. Peng and B. H. Moeckly (unpublished).
10. P. Berberich, B. Utz, W. Prusseti, and H. Kinder, Physica C 219, 497 (1994).
11. V. C. Matijasevic and P. Slycke, Proc. SPIE 3481, 190 (1998).
12. G. J. Whaley and P. I. Cohen, Appl. Phys. Lett. 57, 144 (1990).
13. P. W. Deelman, L. J. Schowalter, and T. Thundat, J. Vac. Sci. Technol. A 15, 930 (1997).
14. R. Langer, A. Barski, A. Barbier, G. Renaud, M. Leszczynski, I. Grzegory, and S. Porowski, J. Cryst. Growth 205, 31 (1999).
15. S. Labat, P. Gergaud, O. Thopmas, B. Gilles, and A. Marty, Appl. Phys. Lett. 75, 914 (1999).
16. E. B. Svedberg, J. Birch, C. N. L. Edvardsson, and J.-E. Sundgren, Surf. Sci. 431, 16 (1999).
17. K. Shimoyama, K. Kubo, M. Iida, K. Yamabe, and T. Maeda, J. Vac. Sci. Technol. A 19, 2083 (2001).
18. D. de Ligny and P. Richet, Phys. Rev. B 53, 3013 (1996).
19. S. S. Kushwah and J. Shanker, Physica B 225, 283 (1996).
20. B. C. Chakoumakos, D. G. Schlom, M. Urbanik, and J. Luine, J. Appl. Phys. 83, 1979 (1998).
21. J. Y. Tsao, B. W. Dodson, S. T. Picraux, and D. M. Cornelison, Phys. Rev. Lett. 59, 2455 (1987).
22. S. P. Alpay and A. L. Roytburd, J. Appl. Phys. 83, 4714 (1998).
23. M. Hiratani, K. Imagawa, and K. Takagi, J. Appl. Phys. 78, 4258 (1995).
24. C. N. L. Edvardsson, J. Birch, and U. Helmersson, J. Mater. Sci.: Mater. Electron. 10, 203 (1999).
25. D. Fuchs, M. Adam, P. Schweiss, S. Gerhold, R. Schneider, and B. Obst, J. Appl. Phys. 88, 1844 (2000).
26. M. J. Gillan and A. B. Lidiard, in Computer Simulation of Solids, edited by C. R. A. Catlow and W. C. Mackrodt (Springer, New York, 1982), p. 32.
27. M. Kestigian, J. G. Dickinson, and R. Ward, J. Am. Chem. Soc. 79, 5598 (1957).
28. H. C. Li, W. D. Si, A. D. West, and X. X. Xi, Appl. Phys. Lett. 73, 190 (1998).
29. B. H. Moeckly and Y. M. Zhang, Mater. Res. Soc. Symp. Proc. 603, 45 (2000).