Correlation between the optical loss and crystalline quality in erbium-doped GaN optical waveguides

Applied Optics

Volumn 52, Issue 22, 2013, Pages 5426-5429

  Feng, I Wen ^a   Zhao, Weiping ^a   Li, Jing ^a   Lin, Jingyu ^a   Jiang, Hongxing ^a   Zavada, John ^b  

^a Texas Tech University   (United States)

^b POLYTECHNIC UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLOGRAPHY; ELECTROMAGNETIC WAVE ATTENUATION; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL CORRELATION; ORGANIC CHEMICALS; ORGANOMETALLICS; WAVEGUIDES;

CRYSTALLINE QUALITY; ERBIUM DOPED; LAYER STRUCTURES; METAL ORGANIC; OPTICAL ATTENUATION; WAVEGUIDE STRUCTURE; X RAY ROCKING CURVE;

ERBIUM;

EID: 84881336959     PISSN: 1559128X     EISSN: 15394522     Source Type: Journal    
DOI: 10.1364/AO.52.005426     Document Type: Article

References (22)

1. D. R. Zimmerman and L. H. Spiekman, "Amplifiers for the masses: EDFA, EDWA, and SOA amplets for metro and access applications," J. Lightwave Technol. 22, 63-70 (2004).
2. J. D. B. Bradley and M. Pollnau, "Erbium-doped integrated waveguide amplifiers and lasers," Laser Photon. Rev. 5, 368-403 (2011).
3. A. R. Peaker, "Erbium in semiconductors: where are we coming from; where are we going?," MRS Proc. 866, 3-12 (2005).
4. R. Dahal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, "Near infrared photonic devices based on Er-doped GaN and InGaN," Opt. Mater. 33, 1066-1070 (2011).
5. R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, "1.54 μm emitters based on erbium doped InGaN p-i-n junctions," Appl. Phys. Lett. 97, 141109 (2010).
6. A. Koizumi, Y. Fujiwara, A. Urakami, K. Inoue, T. Yoshikane, and Y. Takeda, "Effects of active layer thickness on Er excitation cross section in GaInP/GaAs: Er, O/GaInP double heterostructure light-emitting diodes," Phys. B 340, 309-314 (2003).
7. R. Q. Hui, Y. T. Wan, J. Li, S. X. Jin, J. Y. Lin, and H. X. Jiang, "III-nitride-based planar lightwave circuits for long wavelength optical communications," IEEE J. Quantum Electron. 41, 100-110 (2005).
8. XP," Appl. Phys. Lett. 60, 2657-2659 (1992).
9. X. Z. Wang and B.W. Wessels, "Thermal quenching properties of Er doped GaP," Appl. Phys. Lett. 64, 1537-1539 (1994).
10. C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, "Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition," Appl. Phys. Lett. 89, 151903 (2006).
11. J. Zavada and D. Zhang, "Luminescence properties of erbium in III-V compound semiconductors," Solid-State Electron. 38, 1285-1293 (1995).
12. K. Gerd, Optical Fiber Communications (McGraw-Hill, 1998).
13. C. R. Pollock, Fundamentals of Optoelectronics (Irwin, 1995).
14. I. W. Feng, J. Li, A. Sedhain, J. Y. Lin, H. X. Jiang, and J. Zavada, "Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers," Appl. Phys. Lett. 96, 031908 (2010).
15. W. G. Perry, T. Zheleva, M. D. Bremser, R. F. Davis, W. Shan, and J. J. Song, "Correlation of biaxial strains, bound exciton energies, and defect microstructures in GaN films grown on AlN/6H-SiC(0001) substrates," J. Electron. Mater. 26, 224-231 (1997).
16. A T. Wojtowicz, P. Ruterana, N. Rousseau, O. Briot, S. Dalmasso, R.W. Martin, and K. P. O'Donnell, "The microstructure of Er MBE doped GaN," Mater. Sci. Eng. B 105, 114-117 (2003).
17. F. P. Payne and J. P. R. Lacey, "A theoretical-analysis of scattering loss from planar optical wave-guides," Opt. Quantum Electron. 26, 977-986 (1994).
18. A. Kovalenko, V. Kurashov, and O. Matievosova, "Radiation losses in planar dielectric waveguide with random rough surface," in 2011 11th International Conference on Laser and Fiber-Optical Networks Modeling (LFNM), Kharkov, 2011, pp. 1-3.
19. R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, "Erbium-doped GaN optical amplifiers operating at 1.54 μm," Appl. Phys Lett. 95, 111109 (2009).
20. M. Moram and M. Vickers, "X-ray diffraction of III-nitrides," Rep. Prog. Phys. 72, 036502 (2009).
21. Y. Yan, A. J. Faber, H. De Waal, P. G. Kik, and A. Polman, "Erbium-doped phosphate glass waveguide on silicon with 4.1 dB/cm gain at 1.535 μm," Appl. Phys. Lett. 71, 2922-2924 (1997).
22. Q. Wang, R. Dahal, I. W. Feng, J. Y. Lin, H. X. Jiang, and R. Hui, "Emission and absorption cross-sections of an Er:GaN waveguide prepared with metal organic chemical vapor deposition," Appl. Phys. Lett. 99, 121106 (2011).