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Applied Physics Letters

Volumn 89, Issue 15, 2006, Pages

Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition

(5) Ugolini, C a Nepal, N a Lin, J Y a Jiang, H X a Zavada, J M b

a KANSAS STATE UNIVERSITY (United States)

b U S ARMY RESEARCH OFFICE (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION LINES; EPILAYERS; THERMAL QUENCHING; VAN DER PAUW-HALL METHOD;

DOPING (ADDITIVES); ERBIUM; GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; QUENCHING; SYNTHESIS (CHEMICAL);

GALLIUM NITRIDE;

EID: 33750001762 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.2361196 Document Type: Article

Times cited : (65)

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