SCOPUS 정보 검색 플랫폼

Applied Physics Letters

Volumn 96, Issue 3, 2010, Pages

Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers

(6) Feng, I W a Li, J a Sedhain, A a Lin, J Y a Jiang, H X a Zavada, J b

a Texas Tech University (United States)

b North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EMISSION INTENSITY; ER-DOPED; ERBIUM EMISSION; HETEROEPITAXIAL LAYERS; HOST MATERIALS; PHOTONIC INTEGRATED CIRCUITS; STRAIN ENGINEERING; THERMAL STABILITY;

EPILAYERS; ERBIUM; GALLIUM NITRIDE; LATTICE MISMATCH; PHOTONIC DEVICES; THERMOGRAVIMETRIC ANALYSIS;

GALLIUM ALLOYS;

EID: 77949799828 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3295705 Document Type: Article

Times cited : (26)

References (22)

1
- 63349084976
- JCRGAE 0022-0248,. 10.1016/j.jcrysgro.2008.12.007
- S. Chen, J. Seo, J. Sawahata, and K. Akimoto, J. Cryst. Growth JCRGAE 0022-0248 311, 2042 (2009). 10.1016/j.jcrysgro.2008.12.007
- (2009) J. Cryst. Growth , vol.311 , pp. 2042
- Chen, S.¹ Seo, J.² Sawahata, J.³ Akimoto, K.⁴

2
- 33750001762
- Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition
- DOI 10.1063/1.2361196
- C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, Appl. Phys. Lett. APPLAB 0003-6951 89, 151903 (2006). 10.1063/1.2361196 (Pubitemid 44570528)
- (2006) Applied Physics Letters , vol.89 , Issue.15 , pp. 151903
- Ugolini, C.¹ Nepal, N.² Lin, J.Y.³ Jiang, H.X.⁴ Zavada, J.M.⁵

3
- 79956013516
- 0.93N
- DOI 10.1063/1.1484545
- M. R. Correia, S. Pereira, A. Cavaco, and E. Pereira, Appl. Phys. Lett. APPLAB 0003-6951 80, 4504 (2002). 10.1063/1.1484545 (Pubitemid 34751387)
- (2002) Applied Physics Letters , vol.80 , Issue.24 , pp. 4504
- Correia, M.R.¹ Pereira, S.² Cavaco, A.³ Pereira, E.⁴ Alves, E.⁵

4
- 33645229842
- PHYBE3 0921-4526,. 10.1016/j.physb.2005.12.031
- T. Ishiyama, S. Yoneyama, Y. Yamashita, Y. Kamiura, T. Date, T. Hasegawa, K. Inoue, and K. Okuno, Physica B PHYBE3 0921-4526 376, 122 (2006). 10.1016/j.physb.2005.12.031
- (2006) Physica B , vol.376 , pp. 122
- Ishiyama, T.¹ Yoneyama, S.² Yamashita, Y.³ Kamiura, Y.⁴ Date, T.⁵ Hasegawa, T.⁶ Inoue, K.⁷ Okuno, K.⁸

5
- 84950142652
- IEEE proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI), (unpublished)
- P. H. Citrin, P. A. Northrup, R. Birkhahn, and A. J. Steckl, IEEE proceedings of 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI), 2000 (unpublished), pp. 15-22.
- (2000) , pp. 15-22
- Citrin, P.H.¹ Northrup, P.A.² Birkhahn, R.³ Steckl, A.J.⁴

6
- 0001354375
- JAPIAU 0021-8979,. 10.1063/1.365821
- T. D. Culp, U. Hömmerich, J. M. Redwing, T. F. Kuech, and K. L. Bray, J. Appl. Phys. JAPIAU 0021-8979 82, 368 (1997). 10.1063/1.365821
- (1997) J. Appl. Phys. , vol.82 , pp. 368
- Culp, T.D.¹ Hömmerich, U.² Redwing, J.M.³ Kuech, T.F.⁴ Bray, K.L.⁵

7
- 0010458805
- JAPIAU 0021-8979,. 10.1063/1.357737
- J. M. Redwing, T. F. Kuech, D. C. Gordon, B. A. Vaartstra, and S. S. Lau, J. Appl. Phys. JAPIAU 0021-8979 76, 1585 (1994). 10.1063/1.357737
- (1994) J. Appl. Phys. , vol.76 , pp. 1585
- Redwing, J.M.¹ Kuech, T.F.² Gordon, D.C.³ Vaartstra, B.A.⁴ Lau, S.S.⁵

8
- 0031142193
- JAPNDE 0021-4922,. 10.1143/JJAP.36.2587
- Y. Fujiwara, N. Matsubara, J. Tsuchiya, T. Ito, and Y. Takeda, Jpn. J. Appl. Phys., Part 1 JAPNDE 0021-4922 36, 2587 (1997). 10.1143/JJAP.36.2587
- (1997) Jpn. J. Appl. Phys., Part 1 , vol.36 , pp. 2587
- Fujiwara, Y.¹ Matsubara, N.² Tsuchiya, J.³ Ito, T.⁴ Takeda, Y.⁵

9
- 0024668337
- ELLEAK 0013-5194,. 10.1049/el:19890486
- P. N. Favennec, H. L'Haridon, M. Salvi, D. Moutonnet, and Y. Le Guillou, Electron. Lett. ELLEAK 0013-5194 25, 718 (1989). 10.1049/el:19890486
- (1989) Electron. Lett. , vol.25 , pp. 718
- Favennec, P.N.¹ L'Haridon, H.² Salvi, M.³ Moutonnet, D.⁴ Le Guillou, Y.⁵

10
- 33644901542
- OMATET 0925-3467,. 10.1016/j.optmat.2005.09.014
- V. Glukhanyuk, H. Przybylinska, A. Kozanecki, and W. Jantsch, Opt. Mater. OMATET 0925-3467 28, 746 (2006). 10.1016/j.optmat.2005.09.014
- (2006) Opt. Mater. , vol.28 , pp. 746
- Glukhanyuk, V.¹ Przybylinska, H.² Kozanecki, A.³ Jantsch, W.⁴

11
- 37349083102
- Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er
- DOI 10.1016/j.mseb.2007.07.032, PII S0921510707003510
- K. Makarova, M. Stachowicz, V. Glukhanyuk, A. Kozanecki, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, Mater. Sci. Eng., B MSBTEK 0921-5107 146, 193 (2008). 10.1016/j.mseb.2007.07.032 (Pubitemid 350297822)
- (2008) Materials Science and Engineering B: Solid-State Materials for Advanced Technology , vol.146 , Issue.1-3 , pp. 193-195
- Makarova, K.¹ Stachowicz, M.² Glukhanyuk, V.³ Kozanecki, A.⁴ Ugolini, C.⁵ Lin, J.Y.⁶ Jiang, H.X.⁷ Zavada, J.⁸

12
- 0344140986
- MIJNF7 1092-5783.
- R. H. Birkhahn, R. Hudgins, D. S. Lee, B. K. Lee, A. J. Steckl, A. Saleh, R. G. Wison, and J. M. Zavada, MRS Internet J. Nitride Semicond. Res. MIJNF7 1092-5783 4S1, G3.80 (1999).
- (1999) MRS Internet J. Nitride Semicond. Res. , vol.41 , pp. 380
- Birkhahn, R.H.¹ Hudgins, R.² Lee, D.S.³ Lee, B.K.⁴ Steckl, A.J.⁵ Saleh, A.⁶ Wison, R.G.⁷ Zavada, J.M.⁸

13
- 79955991694
- Growth-temperature dependence of Er-doped GaN luminescent thin films
- DOI 10.1063/1.1434312
- D. S. Lee, J. Heikenfeld, and A. J. Steckl, Appl. Phys. Lett. APPLAB 0003-6951 80, 344 (2002). 10.1063/1.1434312 (Pubitemid 34105343)
- (2002) Applied Physics Letters , vol.80 , Issue.3 , pp. 344
- Lee, D.S.¹ Heikenfeld, J.² Steckl, A.J.³

14
- 22644449300
- JVTBD9 1071-1023,. 10.1116/1.590722
- R. Birkhahn, R. Hudgins, D. Lee, A. J. Steckl, R. J. Molnar, and J. M. Zavada, J. Vac. Sci. Technol. B JVTBD9 1071-1023 17, 1195 (1999). 10.1116/1.590722
- (1999) J. Vac. Sci. Technol. B , vol.17 , pp. 1195
- Birkhahn, R.¹ Hudgins, R.² Lee, D.³ Steckl, A.J.⁴ Molnar, R.J.⁵ Zavada, J.M.⁶

15
- 33846942950
- Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition
- DOI 10.1063/1.2450641
- C. Ugolini, N. Nepal, J. Y. Lin, H. X. Jiang, and J. M. Zavada, Appl. Phys. Lett. APPLAB 0003-6951 90, 051110 (2007). 10.1063/1.2450641 (Pubitemid 46245822)
- (2007) Applied Physics Letters , vol.90 , Issue.5 , pp. 051110
- Ugolini, C.¹ Nepal, N.² Lin, J.Y.³ Jiang, H.X.⁴ Zavada, J.M.⁵

16
- 48249144847
- APPLAB 0003-6951,. 10.1063/1.2955834
- R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, Appl. Phys. Lett. APPLAB 0003-6951 93, 033502 (2008). 10.1063/1.2955834
- (2008) Appl. Phys. Lett. , vol.93 , pp. 033502
- Dahal, R.¹ Ugolini, C.² Lin, J.Y.³ Jiang, H.X.⁴ Zavada, J.M.⁵

17
- 70349498809
- APPLAB 0003-6951,. 10.1063/1.3224203
- R. Dahal, C. Ugolini, J. Y. Lin, H. X. Jiang, and J. M. Zavada, Appl. Phys. Lett. APPLAB 0003-6951 95, 111109 (2009). 10.1063/1.3224203
- (2009) Appl. Phys. Lett. , vol.95 , pp. 111109
- Dahal, R.¹ Ugolini, C.² Lin, J.Y.³ Jiang, H.X.⁴ Zavada, J.M.⁵

18
- 0001495657
- JAPIAU 0021-8979,. 10.1063/1.366114
- A. F. Wright, J. Appl. Phys. JAPIAU 0021-8979 82, 2833 (1997). 10.1063/1.366114
- (1997) J. Appl. Phys. , vol.82 , pp. 2833
- Wright, A.F.¹

19
- 34249105305
- Strain analysis of a GaN epilayer grown on a c-plane sapphire substrate with different growth times
- DOI 10.1007/s10853-007-1562-5, Special Section: Size-Dependent Effects in Materials for Environmental Protection and Energy Application
- S. I. Cho, K. Chang, and M. S. Kwon, J. Mater. Sci. JMTSAS 0022-2461 42, 3569 (2007). 10.1007/s10853-007-1562-5 (Pubitemid 46790713)
- (2007) Journal of Materials Science , vol.42 , Issue.10 , pp. 3569-3572
- Cho, S.I.¹ Chang, K.² Kwon, M.S.³

20
- 0035926592
- JPAPBE 0022-3727,. 10.1088/0022-3727/34/10A/308
- V. S. Harutyunyan, A. P. Aivazyan, E. R. Weber, Y. Kim, Y. Park, and S. G. Subramanya, J. Phys. D JPAPBE 0022-3727 34, A35 (2001). 10.1088/0022-3727/34/ 10A/308
- (2001) J. Phys. D , vol.34 , pp. 35
- Harutyunyan, V.S.¹ Aivazyan, A.P.² Weber, E.R.³ Kim, Y.⁴ Park, Y.⁵ Subramanya, S.G.⁶

21
- 34648822127
- Correlation between biaxial stress and free exciton transition in AlN epilayers
- DOI 10.1063/1.2789182
- B. N. Pantha, N. Nepal, T. M. Al Tahtamouni, M. L. Kakarmi, J. Li, J. Y. Lin, and H. X. Jiang, Appl. Phys. Lett. APPLAB 0003-6951 91, 121117 (2007). 10.1063/1.2789182 (Pubitemid 47461863)
- (2007) Applied Physics Letters , vol.91 , Issue.12 , pp. 121117
- Pantha, B.N.¹ Nepal, N.² Al Tahtamouni, T.M.³ Nakarmi, M.L.⁴ Li, J.⁵ Lin, J.Y.⁶ Jiang, H.X.⁷

22
- 19944431205
- JAPIAU 0021-8979,. 10.1063/1.1826219
- K. Jeganathan, M. Shimizu, and H. Okumura, J. Appl. Phys. JAPIAU 0021-8979 97, 013524 (2005). 10.1063/1.1826219
- (2005) J. Appl. Phys. , vol.97 , pp. 013524
- Jeganathan, K.¹ Shimizu, M.² Okumura, H.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.