Near infrared photonic devices based on Er-doped GaN and InGaN

Optical Materials

Volumn 33, Issue 7, 2011, Pages 1066-1070

  Dahal, R ^a   Lin, J Y ^a   Jiang, H X ^a   Zavada, J M ^b  

^a Texas Tech University   (United States)

^b North Carolina State University   (United States)

Author keywords

Er; GaN; InGaN; IR emitter; PL; PLE

Indexed keywords

DIODE AMPLIFIERS; EPILAYERS; ERBIUM; ERBIUM COMPOUNDS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; INDIUM ALLOYS; INFRARED DEVICES; LIGHT AMPLIFIERS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; NARROW BAND GAP SEMICONDUCTORS; NITRIDES; OPTICAL SWITCHES; ORGANIC CHEMICALS; ORGANOMETALLICS; PHOTONIC DEVICES; PHOTONIC INTEGRATION TECHNOLOGY; SEMICONDUCTOR ALLOYS; SILICA; WIDE BAND GAP SEMICONDUCTORS;

A3. METAL ORGANIC CHEMICAL VAPOR DEPOSITION (MOCVD); DIFFERENT SUBSTRATES; III-NITRIDE SEMICONDUCTORS; INGAN; IR EMITTERS; NEAR INFRARED EMITTERS; PHOTONIC INTEGRATED CIRCUITS; TEMPERATURE-INSENSITIVE;

GALLIUM ALLOYS;

EID: 79955525867     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optmat.2010.10.002     Document Type: Conference Paper

References (19)

1. P.G. Kik, and A. Polman Erbium-doped optical-waveguide amplifiers in silicon MRS Bull. 23 1998 48
2. H. Ennen, J. Schneider, G. Pomrenke, and A. Axmann 1.54 μm luminescence of erbium-implanted III-V semiconductors and silicon Appl. Phys. Lett. 43 1983 943
3. P.N. Favennec, H. L'Haridon, M. Salvi, D. Moutonnet, and Y. Le Guillou Luminescence of erbium implanted in various semiconductors: IV, III-V and II-VI materials Electron. Lett. 25 1989 718
4. A.J. Steckl, and J.M. Zavada Optoelectronic properties and applications of rare-earth-doped GaN MRS Bull. 24 1999 33
5. J.M. Zavada, S.X. Jin, N. Nepal, J.Y. Lin, H.X. Jiang, P. Chow, and B. Hertog Electroluminescent properties of erbium-doped III-N light emitting diodes Appl. Phys. Lett. 84 2004 1061
6. 3 + emission centers in Er-implanted GaN by Mg codoping Appl. Phys. Lett. 76 2000 2403
7. J.M. Zavada, N. Nepal, C. Ugolini, J.Y. Lin, H.X. Jiang, R. Devies, J. Hite, C.R. Abernathy, S.J. Pearton, E.E. Brown, and U. Hommerich Optical and magnetic behavior of erbium-doped GaN epilayers grown by metal-organic chemical vapor deposition Appl. Phys. Lett. 91 2007 054106
8. K.P. O'Donnel, and B. Hourahine Rare earth doped III-nitrides for optoelectronics Eur. Phys. J. Appl. Phys 36 2006 91
9. U. Hommerich, M. Thaik, R.N. Schwartz, R.G. Wilson, J.M. Zavada, S.J. Pearton, C.R. Abernathy, and J.D. MacKenzie Evaluation of erbium doped III-nitride semiconductors for optoelectronic applications Proc. Electrochem. Soc. 2 1998 110
10. J.T. Torvik, C.H. Qiu, R.J. Feuerstein, J.I. Pankove, and F. Namavar Photo-, cathodo-, and electroluminescence from erbium and oxygen co-implanted GaN J. Appl. Phys. 81 1997 6343
11. J.T. Seo, U. Hommerich, J.D. MacKenzie, C.R. Abernathy, and J.M. Zavada Near-infrared luminescent device and optical spectroscopy of Er-doped gallium nitride prepared by metalorganic molecular beam epitaxy J. Korean Phys. Soc 36 2000 311
12. M.A.J. Klik, I. IZeddin, J. Phillips, and T. Gregorkiewicz Excitation paths in RE-doped III-V semiconductors Mater. Sci. Eng. B105 2003 141
13. J.M. Zavada, U. Hommerich, and A.J. Steckl M.O. Manasreh, H.X. Jiang, III-Nitride Semiconductors: Optical Properties I 2002 Taylor & Francis New York
14. S. Nakamura, and G. Fasol The Blue Laser Diode: GaN Based Light Emitters and Lasers 1997 Springer New York
15. C. Ugolini, N. Nepal, J.Y. Lin, H.X. Jiang, and J.M. Zavada Erbium-doped GaN epilayers synthesized by metal-organic chemical vapor deposition Appl. Phys. Lett. 89 2006 151903
16. C. Ugolini, N. Nepal, J.Y. Lin, H.X. Jiang, and J.M. Zavada Excitation dynamics of the 1.54 μm emission in Er doped GaN synthesized by metal organic chemical vapor deposition" Appl. Phys. Lett. 90 2007 051110
17. R. Dahal, C. Ugolini, J.Y. Lin, H.X. Jiang, and J.M. Zavada Current-injected 1.54 μm light emitting diodes based on erbium-doped GaN Appl. Phys. Lett. 93 2008 033502
18. R. Dahal, C. Ugolini, J.Y. Lin, H.X. Jiang, and J.M. Zavada Erbium-doped GaN optical amplifiers operating at 1.54 μm Appl. Phys. Lett. 95 2009 111109
19. I.W. Feng, J. Li, A. Sedhain, J.Y. Lin, H.X. Jiang, and J.M. Zavada Enhancing erbium emission by strain engineering in GaN heteroepitaxial layers Appl. Phys. Lett. 96 2010 031908