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Applied Physics Letters

Volumn 97, Issue 14, 2010, Pages

1.54 μm emitters based on erbium doped InGaN p-i-n junctions

(5) Dahal, R a Ugolini, C b Lin, J Y a Jiang, H X a Zavada, J M c

a Department of Electrical and Computer Engineering (United States)

b KANSAS STATE UNIVERSITY (United States)

c POLYTECHNIC UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE LAYER; CHIP-SCALE; ER-DOPED; ERBIUM DOPED; FORWARD BIAS; INPUT CURRENT; INTEGRATED POWER; MESA DEVICES; METALORGANIC CHEMICAL VAPOR DEPOSITION; NEAR-INFRARED EMISSIONS; P-I-N JUNCTIONS; P-I-N STRUCTURE; ROOM TEMPERATURE; WAVEGUIDE AMPLIFIERS;

ELECTROLUMINESCENCE; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANIC LIGHT EMITTING DIODES (OLED); ORGANOMETALLICS; SEMICONDUCTOR GROWTH;

ERBIUM;

EID: 77958075959 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3499654 Document Type: Article

Times cited : (45)

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