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Volumn 340-342, Issue , 2003, Pages 309-314

Effects of active layer thickness on Er excitation cross section in GaInP/GaAs:Er,O/GaInP double heterostructure light-emitting diodes

(6) Koizumi, A a Fujiwara, Y a,b Urakami, A a Inoue, K a Yoshikane, T a Takeda, Y a

a NAGOYA UNIVERSITY (Japan)

b OSAKA UNIVERSITY (Japan)

Author keywords

Double heterostructures; Erbium; Excitation cross section; Organometallic vapor phase epitaxy; Oxygen

Indexed keywords

CURRENT DENSITY; ELECTROLUMINESCENCE; ENERGY TRANSFER; ERBIUM; HETEROJUNCTIONS; METALLORGANIC VAPOR PHASE EPITAXY; OPTICAL COMMUNICATION; OXYGEN; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE;

CURRENT INJECTION; DOUBLE HETROSTRUCTURES (DH);

LIGHT EMITTING DIODES;

EID: 0346686055 PISSN: 09214526 EISSN: None Source Type: Journal
DOI: 10.1016/j.physb.2003.09.085 Document Type: Conference Paper

Times cited : (21)

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