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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Erbium-doped GaN optical amplifiers operating at 1.54 μm

(5) Dahal, R a,b Ugolini, C b Lin, J Y a Jiang, H X a Zavada, J M c

a Department of Electrical and Computer Engineering (United States)

b KANSAS STATE UNIVERSITY (United States)

c North Carolina State University (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; ERBIUM DOPED; GAN LIGHT-EMITTING DIODES; HETEROSTRUCTURES; OPTICAL AMPLIFICATIONS; OPTICAL AMPLIFIER; OPTICAL COMMUNICATION WAVELENGTH; PHOTONIC INTEGRATED CIRCUITS; PROPAGATION LOSS; PUMP SOURCES; SIGNAL ENHANCEMENT; SIGNAL INPUT; WAVEGUIDE AMPLIFIERS;

AMPLIFICATION; BROADBAND AMPLIFIERS; ERBIUM; GALLIUM ALLOYS; GALLIUM NITRIDE; INTEGRATED CIRCUITS; INTEGRATED OPTOELECTRONICS; LIGHT AMPLIFIERS; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; OPTICAL WAVEGUIDES; PHOTONICS; SEMICONDUCTING GALLIUM; WAVEGUIDES;

OPTICAL COMMUNICATION;

EID: 70349498809 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3224203 Document Type: Article

Times cited : (50)

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