The microstructure of Er MBE doped GaN

Materials Science and Engineering: B

Volumn 105, Issue 1-3, 2003, Pages 114-117

  Wojtowicz, T ^a   Ruterana, P ^a   Rousseau, N ^b   Briot, O ^b   Dalmasso, S ^c   Martin, R W ^c   O'Donnell, K P ^c  

^a CNRS   (France)

^b UNIV MONTPELLIER   (France)

^c UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

Erbium doping; GaN; HREM; MBE; TEM

Indexed keywords

ELECTROLUMINESCENCE; ENERGY DISPERSIVE SPECTROSCOPY; ERBIUM; HIGH RESOLUTION ELECTRON MICROSCOPY; METALLORGANIC CHEMICAL VAPOR DEPOSITION; MICROSTRUCTURE; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

ATOMIC SHELL TRANSITIONS; ENERGY COUPLINGS;

GALLIUM NITRIDE;

EID: 0344444340     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2003.08.027     Document Type: Conference Paper

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