Investigation of single-trap-induced random telegraph noise for tunnel FET based devices, 8T SRAM cell, and sense amplifiers

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2013, Pages

  Fan, Ming Long ^a   Hu, Vita Pi Ho ^a   Chen, Yin Nien ^a   Su, Pin ^a   Chuang, Ching Te ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

FinFET; Random Telegraph Noise (RTN); Sense Amplifier; SRAM Cell; Tunnel FET (TFET)

Indexed keywords

FINFET; RANDOM TELEGRAPH NOISE; SENSE AMPLIFIER; SRAM CELL; TUNNEL FET (TFET);

THREE DIMENSIONAL;

FIELD EFFECT TRANSISTORS;

EID: 84880970042     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2013.6532068     Document Type: Conference Paper

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