Performance comparison of silicon steep subthreshold FETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 6, 2010, Pages 1362-1368

  Tura, Ahmet ^a   Woo, Jason C S ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Feedback FET (FBFET); Impact ionization MOSFET (IMOS); Nanoelectromechanical FET (NEMFET); Tunnel FET (TFET)

Indexed keywords

MOS-FET; MOSFET SCALING; NANO-ELECTROMECHANICAL; NOVEL DEVICES; OFF-STATE CURRENT; PERFORMANCE COMPARISON; STANDBY-POWER DISSIPATION; SUBTHRESHOLD; SUBTHRESHOLD SWING; TUNNEL FET;

MESFET DEVICES; MOSFET DEVICES; PARTICLE DETECTORS;

IMPACT IONIZATION;

EID: 77952741987     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2047066     Document Type: Article

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