메뉴 건너뛰기




Volumn , Issue , 2012, Pages 471-474

Variation tolerant CLSAs for nanoscale Bulk-CMOS and FinFET SRAM

Author keywords

Current Latch Based Sense Amplifier; FinFET; Offset; SRAM; Yield

Indexed keywords

ARRAY EFFICIENCY; BIT LINES; EXTENSIVE SIMULATIONS; FINFET; FINFET DEVICES; NANO SCALE; OFFSET; OFFSET ERRORS; SENSE AMPLIFIER; YIELD;

EID: 84874179474     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/APCCAS.2012.6419074     Document Type: Conference Paper
Times cited : (9)

References (17)
  • 1
    • 0027576335 scopus 로고
    • A current controlled latch sense amplifier and a static power-saving input buffer for low-power architecture
    • T. Kobayashi et al.,"A current controlled latch sense amplifier and a static power-saving input buffer for low-power architecture," JSSC, p.523, 1993.
    • (1993) JSSC , pp. 523
    • Kobayashi, T.1
  • 2
    • 0342495623 scopus 로고
    • 9 ns 16 Mb CMOS SRAM with offset reduced current sense amplifier
    • K. Seno, et al.,"9 ns 16 Mb CMOS SRAM with offset reduced current sense amplifier," ISSCC, p.248, 1993.
    • (1993) ISSCC , pp. 248
    • Seno, K.1
  • 3
    • 36949018189 scopus 로고    scopus 로고
    • 0.9 v current-mode sense amplifier using concurrent bit-and data-line tracking and sensing techniques
    • A. T. Do et al.,"0.9 V current-mode sense amplifier using concurrent bit-and data-line tracking and sensing techniques," Electron. Lett., p. 1421, 2007.
    • (2007) Electron. Lett. , pp. 1421
    • Do, A.T.1
  • 4
    • 3042778488 scopus 로고    scopus 로고
    • Yield and speed optimization of a latch type voltage sense amplifier
    • B. Wicht et al.,"Yield and speed optimization of a latch type voltage sense amplifier", JSSC, p.1148, 2004.
    • (2004) JSSC , pp. 1148
    • Wicht, B.1
  • 5
    • 44849131962 scopus 로고    scopus 로고
    • Simulation of statistical variability in nano MOSFETs
    • A. Asenov,"Simulation of statistical variability in nano MOSFETs," IEEE VLSIT, p.86, 2007.
    • (2007) IEEE VLSIT , pp. 86
    • Asenov, A.1
  • 6
    • 71049186856 scopus 로고    scopus 로고
    • Omprehensive analysis of variability sources of FinFET characteristics
    • T. Matsukawa et al.,"Comprehensive analysis of variability sources of FinFET characteristics," IEEE VLSIT, p.118, 2009.
    • (2009) IEEE VLSIT , pp. 118
    • Matsukawa, T.1
  • 7
    • 41749084658 scopus 로고    scopus 로고
    • Impact of line-edge roughness on finfet matching performance
    • E. Baravelli, et al.,"Impact of Line-Edge Roughness on FinFET Matching Performance," IEEE TED, p.2466, 2007.
    • (2007) IEEE TED , pp. 2466
    • Baravelli, E.1
  • 8
    • 33845879329 scopus 로고    scopus 로고
    • Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-? gate stack materials
    • A.R.Brown et al.,"Intrinsic parameter fluctuations in MOSFETs due to structural non-uniformity of high-? gate stack materials," SISPAD, p.27, 2005.
    • (2005) SISPAD , pp. 27
    • Brown, A.R.1
  • 9
    • 79952038442 scopus 로고    scopus 로고
    • Comparison of 4t and 6t finfet sram cells for subthreshold operation considering variability-A model-based approach
    • M.-L. Fan et al.,"Comparison of 4T and 6T FinFET SRAM Cells for Subthreshold Operation Considering Variability-A Model-Based Approach," IEEE TED, p.609, 2011.
    • (2011) IEEE TED , pp. 609
    • Fan, M.-L.1
  • 10
    • 33644998470 scopus 로고    scopus 로고
    • A novel high-performance and robust sense amplifier using independent gate control in sub-50-nm double-gate MOSFET
    • S. Mukhopadhyay et al.,"A novel high-performance and robust sense amplifier using independent gate control in sub-50-nm double-gate MOSFET," IEEE TVLSI, p.183, 2006.
    • (2006) IEEE TVLSI , pp. 183
    • Mukhopadhyay, S.1
  • 11
    • 70349509049 scopus 로고    scopus 로고
    • A process variation tolerant self-compensating sense amplifier design
    • A. Choudhary et al.,"A Process Variation Tolerant Self-Compensating Sense Amplifier Design," IEEE ISVLSI, p. 263, 2009.
    • (2009) IEEE ISVLSI , pp. 263
    • Choudhary, A.1
  • 12
    • 33846910535 scopus 로고    scopus 로고
    • Leakage current based stabilization scheme for robust sense-amplifier design for yield enhancement in nano-scale sram
    • S. Mukhopadhyay, et. al,"Leakage Current Based Stabilization Scheme for Robust Sense-Amplifier Design for Yield Enhancement in Nano-scale SRAM," ATS, p.176, 2006.
    • (2006) ATS , pp. 176
    • Mukhopadhyay, S.1
  • 13
    • 84874154046 scopus 로고    scopus 로고
    • Sentaurus TCAD, C2009-06 Manual, 2009
    • Sentaurus TCAD, C2009-06 Manual, 2009.
  • 14
    • 84874159343 scopus 로고    scopus 로고
    • http://www.intel.com.
  • 15
    • 29044440093 scopus 로고    scopus 로고
    • InFET-A self-aligned double-gate MOSFET scalable to 20 nm
    • D. Hisamoto et al.,"FinFET-A self-aligned double-gate MOSFET scalable to 20 nm," IEEE TED, p. 2320, 2000.
    • (2000) IEEE TED , pp. 2320
    • Hisamoto, D.1
  • 16
    • 3342955721 scopus 로고    scopus 로고
    • A highly Vth-controllable 4T FinFET with an 8.5-nmthick Si-fin channel
    • Y. Liu et al.,"A highly Vth-controllable 4T FinFET with an 8.5-nmthick Si-fin channel," IEEE EDL, p.510, 2004.
    • (2004) IEEE EDL , pp. 510
    • Liu, Y.1
  • 17
    • 58049120007 scopus 로고    scopus 로고
    • Importance sampling monte carlo simulations for accurate estimation of sram yield
    • T.S. Doorn et al.,"Importance sampling Monte Carlo simulations for accurate estimation of SRAM yield," ESSCIRC, p.230, 2008.
    • (2008) ESSCIRC , pp. 230
    • Doorn, T.S.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.