SiGe derivatization by spontaneous reduction of aryl diazonium salts

Applied Surface Science

Volumn 282, Issue , 2013, Pages 146-155

  Girard, A ^a   Geneste, F ^b   Coulon, N ^a   Cardinaud, C ^c   Mohammed Brahim, T ^a  

^a IETR   (France)

^b INSTITUT DES SCIENCES CHIMIQUES DE RENNES   (France)

^c UNIVERSITÉ DE NANTES   (France)

Author keywords

Derivatization; Diazonium salts; Film thickness; Germanium; Plasma etching; Semiconductors

Indexed keywords

CHEMICAL ANALYSIS; FILM THICKNESS; GERMANIUM; GERMANIUM COMPOUNDS; GRAFTING (CHEMICAL); PLASMA ETCHING; SALTS; SEMICONDUCTING SILICON; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACE ROUGHNESS; X RAY PHOTOELECTRON SPECTROSCOPY;

ARYLDIAZONIUM SALTS; DERIVATIZATIONS; DIAZONIUM SALTS; FET BASED BIOSENSORS; FUNCTIONALIZATION PROCESS; FUNCTIONALIZED SURFACES; INTRINSIC PROPERTY; THIN ORGANIC FILMS;

SI-GE ALLOYS;

EID: 84880945959     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.05.091     Document Type: Article

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