The thermoelectric properties of Ge/SiGe modulation doped superlattices

Journal of Applied Physics

Volumn 113, Issue 23, 2013, Pages

  Samarelli, A ^a   Ferre Llin, L ^a   Cecchi, S ^b   Frigerio, J ^b   Etzelstorfer, T ^c   Muller E ^d   Zhang, Y ^a   Watling, J R ^a   Chrastina, D ^b   Isella, G ^b   Stangl, J ^c   Hague, J P ^e   Weaver, J M R ^a   Dobson, P ^a   Paul, D J ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b POLITECNICO DI MILANO   (Italy)

^c JOHANNES KEPLER UNIVERSITY LINZ   (Austria)

^d ETH ZURICH   (Switzerland)

^e OPEN UNIVERSITY   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

BOLTZMANN TRANSPORT EQUATION; HIGH ELECTRICAL CONDUCTIVITY; LOW-TEMPERATURE MEASUREMENTS; MOBILITY SPECTRUM ANALYSIS; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PERFORMANCE; THERMOELECTRIC PROPERTIES; THREADING DISLOCATION DENSITIES;

ELECTRIC POWER FACTOR; GERMANIUM; MONTE CARLO METHODS; SCATTERING PARAMETERS; SILICON; SPECTRUM ANALYSIS; SUPERLATTICES; TEMPERATURE MEASUREMENT; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

MODULATION;

EID: 84880843712     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4811228     Document Type: Article

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