Nanofabrication of high aspect ratio (∼50:1) sub-10 nm silicon nanowires using inductively coupled plasma etching

Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 30, Issue 6, 2012, Pages

  Mirza, Muhammad M ^a   Zhou, Haiping ^a   Velha, Philippe ^a   Li, Xu ^a   Docherty, Kevin E ^a   Samarelli, Antonio ^a   Ternent, Gary ^a   Paul, Douglas J ^a  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHAMBER PRESSURE; ETCH PROCESS; ETCH RATES; HARD MASKS; HIGH ASPECT RATIO; HIGH RESOLUTION; HYDROGEN SILSESQUIOXANE; ION ENERGIES; NANOFABRICATION TECHNIQUES; NEGATIVE TONES; PATTERN TRANSFER PROCESS; PLASMA EXCITATION; PLASMA-INDUCED; PLATEN POWER; ROOM TEMPERATURE; SIDEWALL DAMAGE; SIDEWALL PROFILES; SILICON MATERIALS; SILICON NANOWIRES; SILICON-ON-INSULATOR SUBSTRATES; THERMAL OXIDATION;

ELECTRON BEAM LITHOGRAPHY; INDUCTIVELY COUPLED PLASMA; NANOTECHNOLOGY; NANOWIRES; OPTIMIZATION; SILICON; SILICON ON INSULATOR TECHNOLOGY; SILICON OXIDES; SULFUR HEXAFLUORIDE;

ASPECT RATIO;

EID: 84870327848     PISSN: 21662746     EISSN: 21662754     Source Type: Journal    
DOI: 10.1116/1.4755835     Document Type: Article

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