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Applied Physics Letters

Volumn 100, Issue 2, 2012, Pages

Ohmic contacts to n-type germanium with low specific contact resistivity

(6) Gallacher, K a Velha, P a Paul, D J a MacLaren, I a Myronov, M b Leadley, D R b

a UNIVERSITY OF GLASGOW (United Kingdom)

b UNIVERSITY OF WARWICK (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEAL TEMPERATURES; CONTACT RESISTIVITIES; HEAVILY DOPED; LOW RESISTIVITY; LOW TEMPERATURES; OHMIC BEHAVIOUR; QUANTUM MECHANICAL TUNNELLING; SCHOTTKY BARRIERS; SPECIFIC CONTACT RESISTIVITY; TRANSMISSION ELECTRON MICROSCOPE;

ELECTRIC CONTACTORS; NICKEL COMPOUNDS; OHMIC CONTACTS; QUANTUM THEORY; SCHOTTKY BARRIER DIODES; TRANSMISSION ELECTRON MICROSCOPY;

GERMANIUM;

EID: 84855917418 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3676667 Document Type: Article

Times cited : (92)

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