High room-temperature hole mobility in Ge0.7Si0.3/Ge/Ge0.7Si0.3 modulation-doped heterostructures

Journal of Applied Physics

Volumn 89, Issue 4, 2001, Pages 2497-2499

  Madhavi, S ^a   Venkataraman, V ^a   Xie, Y H ^b  

^a INDIAN INSTITUTE OF SCIENCE   (India)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001577188     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1334632     Document Type: Article

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