High conductance Ge p-channel heterostructures realized by hybrid epitaxial growth

Semiconductor Science and Technology

Volumn 19, Issue 10, 2004, Pages

  Morris, R J H ^a   Grasby, T J ^a   Hammond, R ^a   Myronov, M ^a   Mironov, O A ^a   Leadley, D R ^a   Whall, T E ^a   Parker, E H C ^a   Currie, M T ^b   Leitz, C W ^b   Fitzgerald, E A ^c  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b AmberWave Systems Corporation   (United States)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTANCE; ENTROPY; EPITAXIAL GROWTH; HETEROJUNCTIONS; HOLE MOBILITY; MOLECULAR BEAM EPITAXY; RELAXATION PROCESSES; TUNING; ULTRAHIGH VACUUM;

CHANNEL MOBILITY; ELASTIC RELAXATION; HYBRID-EPITAXIAL GROWTH; MOBILITY-SPECTRUM ANALYSIS;

SEMICONDUCTING GERMANIUM COMPOUNDS;

EID: 5444237198     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/19/10/L03     Document Type: Article

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