Low-Stress highly-conductive in-situ boron doped Ge0.7Si 0.3 Films by LPCVD

ECS Journal of Solid State Science and Technology

Volumn 1, Issue 5, 2012, Pages

  Kazmi, S N R ^a   Kovalgin, A Y ^a   Aarnink, A A I ^a   Salm, C ^a   Schmitz, J ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 84880310504     PISSN: 21628769     EISSN: 21628777     Source Type: Journal    
DOI: 10.1149/2.008205jss     Document Type: Article

References (29)

1. D. J. Paul, Semicond. Sci. Technol., 19, R75 (2004).
2. T. J. King, J. R. Pfiester, J. D. Shott, J. P. McVittie, and K. C. Saraswat, Dig. - Int. Electron Devices Meet., 253-256, (1990).
3. C. Salm, D. T. van Veen, D. J. Gravesteijn, J. Holleman, and P. H. Woerlee, J. Electrochem. Soc., 144, 3665 (1997).
4. T. Ghani et al., Dig. - Int. Electron Devices Meet., 978-980, (2003).
5. A. Kovalgin and J. Holleman , J. Electrochem. Soc., 153, G363 (2006).
6. H. Takeuchi, A. Wung, X. Sun, R. T. Howe, and T. J. King,IEEE Trans. on Electron Devices, 52, 2081 (2005).
7. J. Schmitz, Nucl. Instrum. Methods Phys. Res. Sect. A, 576, 142 (2007).
8. C. Leinenbach, H. Seidel, T. Fuchs, S. Kronmueller, and F. Laermer, Proc.IEEE MEMS, 65-68 (2007).
9. A. E. Franke, J. M. Heck, T. J. King, and R. T. Howe, J. Microelectromech. Sys., 12, 160 (2003).
10. A. Witvrouw et al., ECS Trans., 33(6), 799 (2010).
11. H. C. Lin, C. Y. Chang, W. H. Chen, W. C. Tsai, T. C. Chang, T. G. Jung, and H. Y. Lin, J. Electrochem. Soc., 141, 2559 (1994).
12. P. E. Hellberg, A. Gagnor, S. L. Zhang, and C. S. Petersson, J. Electrochem. Soc., 144, 3968 (1997).
13. C. W. Low, T. J. King Liu, and R. T. Howe, J. Microelectromech. Sys., 16, 68 (2007).
14. P. Peshev, J. Solid State Chem., 154, 157 (2000).
15. G. Stoney, Proc. R. Soc. London A, 82, 172 (1909).
16. R. W. Cahn, Physical Metallurgy, North-Holland, Amsterdam (1965).
17. P. Scherrer, Nachrichten Göttingen Gesellschaft, 2, 98 (1918).
18. R. A. Young and D. B. Wiles, J. Appl. Cryst., 15, 430 (1982).
19. A. Moriya, M. Sakuraba, T. Matsuura, and J. Murota, Thin Solid Films, 343 -344, 541 (1999).
20. V. Au, C. Charles, D. A. P. Bulla, J. D. Love, and R. W. Boswell, J. Appl. Phys, 084912 (2005).
21. Y. C. Jeon, T. J. King, and R. T. Howe, J. Electrochem. Soc., 150, H1 (2003).
22. S. Sedky, A. Witvrouw, and K. Baert, Sensors and Actuators A: Physical, 97-98, 530 (2002).
23. V. Z-Q Li, M. R. Mirabedini, R. T. Kuehn, J. J. Wortman, and M. C. Oz̈türk et al., Appl. Phys. Lett., 71, 3388 (1997).
24. C.T.C. Nguyen,IEEE Trans. Ultrasonics, Ferroelectrics and Frequency Control, 54(2), 251 (2007).
25. S. N. R. Kazmi, A. A. I. Aarnink, C. Salm, and J. Schmitz, Proc. Int . Freq. Control Symp., Baltimore 2012.
26. W.-L. Huang, Z. Ren, and C. T.-C. Nguyen,IEEE Int. Frequency Control Symp., 839-847 (2006).
27. H. Chandrahalim, S. A. Bhave, E. P. Qúevy, and Roger T. Howe, Proc. Transducers & Eurosensors, 313-316 (2007).
28. C. Zener, Phys. Rev., 53(1), 90 (1938).
29. K. Y. Yasumura, T. D. Stowe, E. M. Chow, T. Pfafman, T. W. Kenny, B. Barry, C. Stipe, and D. Rugar, Microelectromech. Syst., 9(1), 117 (2000).