Characterization of polycrystalline silicon-germanium film deposition for modularly integrated MEMS applications

Journal of Microelectromechanical Systems

Volumn 16, Issue 1, 2007, Pages 68-77

  Low, Carrie W ^a   Liu, Tsu Jae King ^a   Howe, Roger T ^a,b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Stanford University   (United States)

Author keywords

Design of experiments; Low pressure chemical vapor deposition (LPCVD); Microelectromechanical systems (MEMS); Microstructure; Poly SiGe; Process integration; Strain gradient

Indexed keywords

CMOS INTEGRATED CIRCUITS; COMPRESSIVE STRESS; DESIGN OF EXPERIMENTS; LOW PRESSURE CHEMICAL VAPOR DEPOSITION; MEMS; POLYSILICON; RESIDUAL STRESSES; SEMICONDUCTING GERMANIUM;

INERTIAL SENSOR; STRAIN GRADIENT;

POLYCRYSTALLINE MATERIALS;

EID: 33947233756     PISSN: 10577157     EISSN: None     Source Type: Journal    
DOI: 10.1109/JMEMS.2006.886030     Document Type: Article

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