Properties of phosphorus-doped poly-SiGe films for microelectromechanical system applications

Journal of the Electrochemical Society

Volumn 150, Issue 1, 2003, Pages

  Jeon, Yoo Chan ^a   King, Tsu Jae ^a   Howe, Roger T ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY; MECHANICAL PROPERTIES; MICROELECTROMECHANICAL DEVICES; MICROSTRUCTURE; PHOSPHORUS; PRESSURE; RAPID THERMAL ANNEALING; SEMICONDUCTING SILICON COMPOUNDS; STRESS RELIEF; SUBSTRATES; THERMAL EXPANSION;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION; POLY-SILICON GERMANIUM FILM; STRESS GRADIENT;

THIN FILMS;

EID: 0037255257     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1522837     Document Type: Article

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