Rapid thermal chemical vapor deposition of in situ boron-doped polycrystalline silicon-germanium films on silicon dioxide for complimentary-metal-oxide-semiconductor applications

Applied Physics Letters

Volumn 71, Issue 23, 1997, Pages 3388-3390

  Li, V Z Q ^a   Mirabedini, M R ^a   Kuehn, R T ^a   Wortman, J J ^a   Ozturk M C ^a   Batchelor, D ^a   Christensen, K ^a   Maher, D M ^a  

^a North Carolina State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; MOS DEVICES; OXIDES; POLYCRYSTALLINE MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING BORON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

CAPACITANCE VOLTAGE CHARACTERISTICS; CROSS SECTIONAL SCANNING ELECTRON MICROSCOPY; ENERGY DISPERSIVE X RAY SPECTROMETRY; FOUR POINT PROBE MEASUREMENT; RAPID THERMAL CHEMICAL VAPOR DEPOSITION;

THIN FILMS;

EID: 0031560337     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120344     Document Type: Article

References (17)

1. C. M. Osburn, S. Chevacharoenkul, and G. E. McGuire, J. Electrochem. Soc. 139, 2287 (1992).
2. T-J King and K. C. Saraswat, IEDM, 253 (1990).
3. N. Kistler and J. Woo, IEDM, 727 (1993).
4. M. C. Ozturk, D. T. Grider, S. P. Ashburn, M. Sanganeria, and J. J. Wortman, Mater. Res. Soc. Symp. Proc. 224, 223 (1991).
5. M. Cao, A. Wang, and K. C. Saraswat, J. Electrochem. Soc. 142, 1566 (1995).
6. J. A. Tsai and R. Reif, Appl. Phys. Lett. 66, 1809 (1995).
7. H. C. Lin, C. Y. Chang, W. H. Chen, W. C. Tsai, T. C. Chang, T. G. Jung, and H. Y. Lin, J. Electrochem. Soc. 141, 2559 (1994).
8. M. Sanganeria, D. T. Grider, M. C. Ozturk, and J. J. Wortman, J. Electron. Mater. 21, 61 (1992).
9. C-Y Lu, J. M. Sung, H. C. Kirsch, S. J. Hillenius, T. E. Smith, and L. Manchanda, IEEE Electron Device Lett. 10, 192 (1989).
10. V. Z-Q Li, M. R. Mirabedini, R. T. Kuehn, D. Gladden, D. Batchelor, K. Christensen, J. J. Wortman, M. C. Ozturk, and D. M. Maher, 1995 MRS Fall Meeting, Polycrystalline Thin Films II-Structure, Texture, Properties, and Applications, Vol. 403, p. 333.
11. M. C. Ozturk, D. T. Grider, J. J. Wortman, M. A. Littlejohn, Y. Zhong, D. Batchelor, and P. Russell, J. Electron. Mater. 19, 1129 (1990).
12. M. C. Ozturk and J. J. Wortman, U.S. Patent No. 5 250 452, (5 October, 1993).
13. Jin-Won Kim, Myung-Kwan Ryu, Ki-Bum Kim, and Sang-Joo Kim, J. Electrochem. Soc. 143, 363 (1996).
14. T-J King and K. C. Saraswat, J. Electrochem. Soc. 141, 2235 (1994).
15. B. M. H. Ning and J. E. Crowell, Appl. Phys. Lett. 60, 2914 (1992).
16. V. Z-Q Li, M. R. Mirabedini, D. Venables, R. T. Kuehn, J. J. Wortman, IEEE Trans. Electron Devices (submitted for publication).
17. V. Z-Q Li, M. R. Mirabedini, B. Hornung, R. T. Hornung, R. T. Kuehn, J. J. Wortman, M. C. Ozturk, D. Batchelor, D. Vanables, and D. M. Maher, Proceedings of the Sixth International Symposium on ULSI, Vol. 97-3, p. 549, 1997.