Doping and electrical characteristics of in situ heavily B-doped Si1-xGex films epitaxially grown using ultraclean LPCVD

Thin Solid Films

Volumn 343-344, Issue 1-2, 1999, Pages 541-544

  Moriya, Atsushi ^a,b   Sakuraba, Masao ^a   Matsuura, Takashi ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

^b HITACHI KOKUSAI ELECTRIC INC   (Japan)

Author keywords

Boron; Doping; Electrical characteristics; Epitaxy; Low pressure chemical vapor deposition; Silicon germanium

Indexed keywords

BORON; CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; ELECTRIC CONDUCTIVITY OF SOLIDS; EPITAXIAL GROWTH; LATTICE CONSTANTS; PARTIAL PRESSURE; PRESSURE EFFECTS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING;

LOW PRESSURE CHEMICAL VAPOR DEPOSITION (LPCVD); SILICON GERMANIDE; VEGARD'S LAW;

SEMICONDUCTING FILMS;

EID: 0032661444     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01694-0     Document Type: Article

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