Formation of gallium arsenide nanostructures in Pyrex glass

Nanotechnology

Volumn 24, Issue 31, 2013, Pages

  Howlader, Matiar M R ^a   Zhang, Fangfang ^a   Jamal Deen, M ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATED SURFACES; BONDED INTERFACE; CROSS-SECTIONAL OBSERVATIONS; FILTRATION SYSTEMS; LOW TEMPERATURES; NON-BRIDGING OXYGEN; PLASMA ACTIVATION; PYREX GLASS SURFACE;

GALLIUM ARSENIDE; GLASS; IONS; SEMICONDUCTING GALLIUM; TRANSMISSION ELECTRON MICROSCOPY;

NANOSTRUCTURES;

EID: 84880260317     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/31/315301     Document Type: Article

References (43)

1. Iliescu C, Miao J and Tay F E H 2005 Stress control in masking layers for deep wet micromachining of Pyrex glass Sensors Actuators A 117 286-92
2. Wei Hou H, Gan H Y, Bhagat A A S, Li L D, Lim C T and Han J 2012 A microfluidics approach towards high-throughput pathogen removal from blood using margination Biomicrofluidics 6 024115
3. Howlader M M R, Suehara S and Suga T 2006 Room temperature wafer level glass/glass bonding Sensors Actuators A 127 31-6 (Pubitemid 43253661)
4. Lin W-Y, Wang Y, Wang S and Tseng H-R 2009 Integrated microfluidic reactors Nano Today 4 470-81
5. Fokine M 2009 Manipulating glass for photonics Phys. Status Solidi a 206 880-4
6. Deen M J, Shinwari M W, Ranuárez J C and Landheer D 2006 Noise considerations in field-effect biosensors J. Appl. Phys. 100 074703 (Pubitemid 44570744)
7. Howlader M M R, Selvaganapathy P R, Deen M J and Suga T 2011 Nanobonding technology toward electronic, fluidic, and photonic systems integration IEEE J. Sel. Top. Quantum Electron. 17 689-703
8. Howlader M M R, Suehara S, Takagi H, Kim T H, Maeda R and Suga T 2006 Room-temperature microfluidics packaging using sequential plasma activation process IEEE Trans. Adv. Packag. 29 448-56 (Pubitemid 44263686)
9. Deen M J and Basu P K 2012 Silicon Photonics - Fundamentals and Devices (New York: Wiley) pp 1-12
10. Wang D-S, Chao J-J, Hung S-C and Lin C-F 2009 Fabrication of large-area gallium arsenide nanowires using silicon dioxide nanoparticle mask J. Vac. Sci. Technol. B 27 2449
11. Aravamudhan S, Ramgir N and Bhansali S 2007 Electrochemical biosensor for targeted detection in blood using aligned Au nanowires Sensors Actuators B 127 29-35 (Pubitemid 47503700)
12. Pi X D 2004 Characterization of the interface region during the agglomeration of silicon nanocrystals in silicon dioxide J. Appl. Phys. 95 8155
13. He Y, Fan C and Lee S-T 2010 Silicon nanostructures for bioapplications Nano Today 5 282-95
14. Howlader M M R, Kibria M G and Zhang F 2010 Hybrid plasma bonding of germanium and glass wafers at low temperature Mater. Lett. 64 1532-5
15. Ohira K, Kobayashi K, Iizuka N, Yoshida H, Ezaki M, Uemura H, Kojima A, Nakamura K, Furuyama H and Shibata H 2010 On-chip optical interconnection by using integrated III-V laser diode and photodetector with silicon waveguide Opt. Express 18 15440-7
16. Hok B, Dubon C and Ovren C 1983 Anodic bonding of gallium arsenide to glass Appl. Phys. Lett. 43 267-9
17. Sun Y, Khang D-Y, Hua F, Hurley K, Nuzzo R G and Rogers J A 2005 Photolithographic route to the fabrication of micro/nanowires of III-V semiconductors Adv. Funct. Mater. 15 30-40 (Pubitemid 40183834)
18. Yao J, Le A-P, Gray S K, Moore J S, Rogers J A and Nuzzo R G 2010 Functional nanostructured plasmonic materials Adv. Mater. 22 1102-10
19. Deen M 1987 The effect of the deposition rate on the properties of dc-magnetron-sputtered niobium nitride thin films Thin Solid Films 152 535-44
20. Howlader M M R, Kibria M G, Zhang F and Kim M J 2010 Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200 degrees C Talanta 82 508-15
21. Ma X, Chen C, Liu W, Liu X, Du X, Song Z and Lin C 2009 Study of the Ge wafer surface hydrophilicity after low-temperature plasma activation J. Electrochem. Soc. 156 H307
22. Howlader M M R, Zhang F and Kibria M G 2010 Void nucleation at a sequentially plasma-activated silicon/silicon bonded interface J. Micromech. Microeng. 20 065012
23. 2 plasmas Appl. Surf. Sci. 138/139 581-6 (Pubitemid 129604758)
24. Spirkoska D, Abstreiter G and Fontcuberta I Morral A 2008 Size and environment dependence of surface phonon modes of gallium arsenide nanowires as measured by Raman spectroscopy Nanotechnology 19 435704
25. Mizokawa Y, Komoda O and Miyase S 1988 Long-time air oxidation and oxide-substrate reactions on GaSb, GaAs and GaP at room temperature studied by x-ray photoelectron spectroscopy Thin Solid Films 156 127-43 (Pubitemid 18561829)
26. Grunthaner P J 1980 Chemical depth profiles of the GaAs/native oxide interface J. Vac. Sci. Technol. 17 1045 (Pubitemid 11453838)
27. Chang R P H 1979 Some properties of plasma-grown GaAs oxides Thin Solid Films 56 89-106 (Pubitemid 9459778)
28. Howlader M M R, Suga T, Zhang F, Lee T H and Kim M J 2010 Interfacial behavior of surface activated p-GaP/n-GaAs bonded wafers at room temperature Electrochem. Solid-State Lett. 13 H61
29. Li H, Su Y, Li L and Strachan D M 2001 Raman spectroscopic study of gadolinium(III) in sodium-aluminoborosilicate glasses J. Non-Cryst. Solids 292 167-76 (Pubitemid 32997835)
30. Matson D W, Sharma S K and Phillpotts J A 1983 The structure of high-silica alkali-silicate glasses. A Raman spectroscopic investigation J. Non-Cryst. Solids 58 323-52
31. Santra T S, Liu C H, Bhattacharyya T K, Patel P and Barik T K 2010 Characterization of diamond-like nanocomposite thin films grown by plasma enhanced chemical vapor deposition J. Appl. Phys. 107 124320
32. 2 glass: a note on infrared and Raman spectra Am. Miner. 71 772-8
33. De Bonfils J, Peuget S, Panczer G, De Ligny D, Henry S, Noël P-Y, Chenet A and Champagnon B 2010 Effect of chemical composition on borosilicate glass behavior under irradiation J. Non-Cryst. Solids 356 388-93
34. Carlson D E, Hang K W and Stockdale G F 1972 Alkali-containing glasses J. Am. Ceram. Soc. 1971 337-41
35. Van Helvoort A T J, Knowles K M and Fernie J A 2003 Nanostructures at electrostatic bond interfaces J. Am. Ceram. Soc. 86 1773-6
36. Wieneke M, Noltemeyer M, Bastek B, Rohrbeck A, Witte H, Veit P, Bläsing J, Dadgar A, Christen J and Krost A 2011 Heavy Si doping: the key in heteroepitaxial growth of a-plane GaN without basal plane stacking faults? Phys. Status Solidi b 248 578-82
37. Koidis C, Logothetidis S, Kassavetis S, Laskarakis A, Hastas N A and Valassiades O 2010 Growth mechanisms and thickness effect on the properties of Al-doped ZnO thin films grown on polymeric substrates Phys. Status Solidi a 207 1581-5
38. Lo C J, Aref T and Bezryadin A 2006 Fabrication of symmetric sub-5 nm nanopores using focused ion and electron beams Nanotechnology 17 3264-7 (Pubitemid 44149659)
39. Du K, Wathuthanthri I, Mao W, Xu W and Choi C-H 2011 Large-area pattern transfer of metallic nanostructures on glass substrates via interference lithography Nanotechnology 22 285306
40. Wu M-Y, Smeets R M M, Zandbergen M, Ziese U, Krapf D, Batson P E, Dekker N H, Dekker C and Zandbergen H W 2009 Control of shape and material composition of solid-state nanopores Nano Lett. 9 479-84
41. Nakashima Y, Hata S and Yasuda T 2010 Blood plasma separation and extraction from a minute amount of blood using dielectrophoretic and capillary forces Sensors Actuators B 145 561-9
42. Tey J N, Wijaya I P M, Wei J, Rodriguez I and Mhaisalkar S G 2010 Nanotubes-/nanowires-based, microfluidic-integrated transistors for detecting biomolecules Microfluidics Nanofluidics 9 1185-214
43. Hou H W, Bhagat A A S, Lee W C, Huang S, Han J and Lim C T 2011 Microfluidic devices for blood fractionation Micromachines 2 319-43