Hybrid plasma bonding for void-free strong bonded interface of silicon/glass at 200 °c

Talanta

Volumn 82, Issue 2, 2010, Pages 508-515

  Howlader, M M R ^a   Kibria, M G ^a   Zhang, F ^a   Kim, M J ^b  

^a MCMASTER UNIVERSITY   (Canada)

^b The University of Texas at Dallas   (United States)

Author keywords

Anodic bonding; Bonding strength; Electrostatic force; High resolution transmission electron microscopy; Hybrid plasma bonding; Hydrophilicity; Interfacial voids; Sequential plasma activation; Surface roughness

Indexed keywords

CHEMICAL ACTIVATION; DIFFUSION BONDING; ELECTRIC FORCE MICROSCOPY; ELECTROSTATIC FORCE; GLASS; HYDROPHILICITY; REACTIVE ION ETCHING; SILICA; SILICON; SILICON OXIDES; SURFACE ROUGHNESS; TEMPERATURE; WAFER BONDING;

ANODIC BONDING; BONDING STRENGTH; HYBRID PLASMA; INTERFACIAL VOIDS; PLASMA ACTIVATION;

HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY;

EID: 77955324227     PISSN: 00399140     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.talanta.2010.05.001     Document Type: Article

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