Void nucleation at a sequentially plasma-activated silicon/silicon bonded interface

Journal of Micromechanics and Microengineering

Volumn 20, Issue 6, 2010, Pages

  Howlader, M M R ^a   Zhang, F ^a   Kibria, M G ^a  

^a MCMASTER UNIVERSITY   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION TIME; ATOMIC FORCE MICROSCOPES; BONDED INTERFACE; BONDED WAFERS; BONDING STRENGTH; HIGH TEMPERATURE; PLASMA-ACTIVATED BONDINGS; PLASMA-INDUCED; ROOM TEMPERATURE; VOID DENSITY; VOID NUCLEATION;

CONTACT ANGLE; DEFECTS; DIFFUSION BONDING; ELECTRON ENERGY LOSS SPECTROSCOPY; ENERGY DISSIPATION; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; NUCLEATION; PLASMAS; REACTIVE ION ETCHING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES; SILICON WAFERS; SURFACE ROUGHNESS;

WAFER BONDING;

EID: 77952398623     PISSN: 09601317     EISSN: 13616439     Source Type: Journal    
DOI: 10.1088/0960-1317/20/6/065012     Document Type: Article

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