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Electrochemical and Solid-State Letters

Volumn 13, Issue 3, 2010, Pages

Interfacial behavior of surface activated p-GaP/n-GaAs bonded wafers at room temperature

(5) Howlader, M M R a Suga, T b Zhang, F a Lee, T H c Kim, M J c

a MCMASTER UNIVERSITY (Canada)

b UNIVERSITY OF TOKYO (Japan)

c The University of Texas at Dallas (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATED SURFACES; AMORPHOUS LAYER; BONDED WAFERS; BONDING STRENGTH; ELECTRICAL CURRENT; FAST ATOM BEAMS; GAAS; GAAS WAFER; INTERFACIAL BEHAVIORS; ROOM TEMPERATURE; TENSILE TESTS;

GALLIUM ALLOYS; GALLIUM ARSENIDE; SEMICONDUCTING GALLIUM; TENSILE STRENGTH; TENSILE TESTING; WAFER BONDING;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 74849096488 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3272957 Document Type: Article

Times cited : (29)

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