-
1
-
-
82755171141
-
The era of fully-depleted devices
-
November
-
B.-Y. Nguyen, C. Mazure, “The era of fully-depleted devices”, Solid State Technology, Vol. 54, No. 10, p. 12, November 2011.
-
(2011)
Solid State Technology
, vol.54
, Issue.10
, pp. 12
-
-
Nguyen, B.-Y.1
Mazure, C.2
-
2
-
-
80155187887
-
Transistor Wars - Rival architectures face off in a bid to keep Moore's Law alive
-
K. Ahmed, K. Schuegraf, “Transistor Wars - Rival architectures face off in a bid to keep Moore's Law alive”, IEEE Spectrum, No.11, p. 50, 2011.
-
(2011)
IEEE Spectrum
, Issue.11
, pp. 50
-
-
Ahmed, K.1
Schuegraf, K.2
-
3
-
-
85048713891
-
PMOS device performance improvement by using buried contact implants
-
Boise, ID, April 20, press
-
S. Qin, T. McDaniel, L. J. Liu, R. Burke, Y. J. Hu, and A. McTeer, “PMOS Device Performance Improvement by using Buried Contact Implants”, IEEE Workshop on Microelectronics and Electron Devices (WMED2012), Boise, ID, April 20, 2012 (in press).
-
(2012)
IEEE Workshop on Microelectronics and Electron Devices (WMED2012)
-
-
Qin, S.1
McDaniel, T.2
Liu, L.J.3
Burke, R.4
Hu, Y.J.5
McTeer, A.6
-
4
-
-
85088771479
-
6 PLAD for Better Advanced PMOS Device Performance
-
Boise, ID, April 22, 2011, Proceedings,. Surface Coatings and Technology, press
-
6 PLAD for Better Advanced PMOS Device Performance”, IEEE Workshop on Microelectronics and Electron Devices (WMED2011), Boise, ID, April 22, 2011, Proceedings, p. 49, Surface Coatings and Technology, 2012 (in press).
-
(2012)
IEEE Workshop on Microelectronics and Electron Devices (WMED2011)
, pp. 49
-
-
Liu, J.L.1
Qin, S.2
Hu, Y.J.3
McTeer, A.4
-
5
-
-
33747577711
-
New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma
-
B. Mizuno, I. Nakayama et al., “New doping method for subhalf micron trench sidewalls by using an electron cyclotron resonance plasma”, Appl. Phys. Lett., Vol. 53, No. 21, p. 2059, 1988.
-
(1988)
Appl. Phys. Lett.
, vol.53
, Issue.21
, pp. 2059
-
-
Mizuno, B.1
Nakayama, I.2
-
6
-
-
0028447171
-
Trench doping conformality by plasma immersion ion implantation (PIII)
-
C. Yu and N. W. Cheung, “Trench doping conformality by plasma immersion ion implantation (PIII)”, IEEE Elec. Dev. Lett., Vol. 15, No. 6, p. 196, 1994.
-
(1994)
IEEE Elec. Dev. Lett.
, vol.15
, Issue.6
, pp. 196
-
-
Yu, C.1
Cheung, N.W.2
-
7
-
-
64549118140
-
6/Helium Self-Regulatory Plasma Doping process
-
6/Helium Self-Regulatory Plasma Doping process”, IEEE IEDM2008, Tech. Dig, Proc., pp. 917-920, 2008.
-
(2008)
IEEE IEDM2008, Tech. Dig, Proc.
, pp. 917-920
-
-
Sasaki, Y.1
-
8
-
-
85088772951
-
Doping process for trench transistors – Two-dimension cross-sectional doping profiling study
-
June 25-29, Valladolid, Spain in press
-
th International Conference on Ion Implantation Technology (IIT2012), June 25-29, 2012, Valladolid, Spain (in press).
-
(2012)
th International Conference on Ion Implantation Technology (IIT2012)
-
-
Qin, S.1
Wang, Z.2
Hu, Y.J.3
McTeer, A.4
-
9
-
-
85088772726
-
Plasma chemistry study of plasma doping (PLAD) processes
-
June 25-29, Valladolid, Spain in press
-
th International Conference on Ion Implantation Technology (IIT2012), June 25-29, 2012, Valladolid, Spain (in press).
-
(2012)
th International Conference on Ion Implantation Technology (IIT2012)
-
-
Qin, S.1
Brumfield, K.2
Hu, Y.J.3
McTeer, A.4
Wang, M.5
Hsu, W.-H.6
-
10
-
-
58549113978
-
SIMS/ARXPS – A new technique of retained dopant dose and profile measurement of ultra-low energy doping processes
-
January
-
S. Qin, K. Zhuang, S. Lu, A. McTeer, W. Morinville, K. Noehring, “SIMS/ARXPS – A New Technique of Retained Dopant Dose and Profile Measurement of Ultra-Low Energy Doping Processes”, IEEE Trans. on Plasma Science, vol. 37, no. 1, pp. 139-145, January 2009.
-
(2009)
IEEE Trans. on Plasma Science
, vol.37
, Issue.1
, pp. 139-145
-
-
Qin, S.1
Zhuang, K.2
Lu, S.3
McTeer, A.4
Morinville, W.5
Noehring, K.6
-
11
-
-
77954277578
-
Advanced boron-based ultra-low energy doping techniques on USJ fabrications
-
Shanghai, China, May 10-11, Proceedings
-
th International Workshop on Junction Technology (IEEE IWJT2010), Shanghai, China, May 10-11, 2010, Proceedings, p.255.
-
(2010)
th International Workshop on Junction Technology (IEEE IWJT2010)
, pp. 255
-
-
Qin, S.1
Hu, Y.J.2
McTeer, A.3
-
12
-
-
84862801143
-
Study of damage engineering – quantitative scatter defect measurements of ultra-low energy (ule) implantation doping using the continuous anodic oxidation technique/differential hall effect (CAOT/DHE)
-
March
-
S. Qin, A. McTeer, Y. J. Hu, S. Prussin, J. Reyes, “Study of Damage Engineering – Quantitative Scatter Defect Measurements of Ultra-Low Energy (ULE) Implantation Doping Using the Continuous Anodic Oxidation Technique/Differential Hall Effect (CAOT/DHE)”, IEEE Trans. on Plasma Science, vol. 40, no. 3, pp. 877-882, March 2012.
-
(2012)
IEEE Trans. on Plasma Science
, vol.40
, Issue.3
, pp. 877-882
-
-
Qin, S.1
McTeer, A.2
Hu, Y.J.3
Prussin, S.4
Reyes, J.5
-
13
-
-
77949372701
-
The application of the continuous anodic oxidation technique for the evaluation of state-of-the-art front-end structures
-
Monterey, CA, USA, June 08-13, 2008, AIP Conference Proceedings
-
th International Conference on Ion Implantation Technology (IIT-2008), Monterey, CA, USA, June 08-13, 2008, AIP Conference Proceedings, Vol. 1066, pp. 75-78 (2008).
-
(2008)
th International Conference on Ion Implantation Technology (IIT-2008)
, vol.1066
, pp. 75-78
-
-
Prussin, S.1
Qin, S.2
Reyes, J.3
McTeer, A.4
-
14
-
-
70349462824
-
Study of low-energy doping processes using continuous anodic oxidation technique/differential hall effect (CAOT/DHE) measurements
-
September
-
S. Qin, S. Prussin, J. Reyes, Y. J. Hu, A. McTeer, “Study of Low-Energy Doping Processes using Continuous Anodic Oxidation Technique/Differential Hall Effect (CAOT/DHE) Measurements”, IEEE Trans. on Plasma Science, vol. 37, no. 9, pp.1754-1759, September 2009.
-
(2009)
IEEE Trans. on Plasma Science
, vol.37
, Issue.9
, pp. 1754-1759
-
-
Qin, S.1
Prussin, S.2
Reyes, J.3
Hu, Y.J.4
McTeer, A.5
-
15
-
-
79251558764
-
Two-dimensional cross-sectional doping profiling study of low energy high dose ion implantation using high vacuum scanning spreading resistance microscopy (SSRM) and electron holography
-
June 6-11, 2010, Kyoto, Japan, AIP Conference Proceedings
-
th International Conference on Ion Implantation Technology (IIT2010), June 6-11, 2010, Kyoto, Japan, AIP Conference Proceedings, Vol. 1321, pp. 192-195 (2010),
-
(2010)
th International Conference on Ion Implantation Technology (IIT2010)
, vol.1321
, pp. 192-195
-
-
Qin, S.1
Jeff Hu, Y.2
McTeer, A.3
Fillmore, D.4
Lu, S.5
Burke, R.6
Guha, J.7
Vanhaeren, D.8
Eyben, P.9
-
16
-
-
27844437066
-
Scanning spreading resistance microscopy (SSRM) 2D carrier profiling for ultra-shallow junction characterization in deep-submicron technologies
-
December
-
P. Eyben, T. Janssens and W. Vandervorst, “Scanning spreading resistance microscopy (SSRM) 2D carrier profiling for ultra-shallow junction characterization in deep-submicron technologies”, Materials Science and Engineering: B, Vol. 124-125, pp. 45-53, December 2005.
-
(2005)
Materials Science and Engineering: B
, vol.124-125
, pp. 45-53
-
-
Eyben, P.1
Janssens, T.2
Vandervorst, W.3
-
17
-
-
84891388855
-
-
New York: Springer
-
P. Eyben, W. Vandervorst, D. Alvarez, M. Xu and M. Fouchier, Scanning Probe Microscopy Electrical and Electromechanical Phenomena at the Nanoscale, New York: Springer, 2007, pp. 31-87.
-
(2007)
Scanning Probe Microscopy Electrical and Electromechanical Phenomena at The Nanoscale
, pp. 31-87
-
-
Eyben, P.1
Vandervorst, W.2
Alvarez, D.3
Xu, M.4
Fouchier, M.5
-
18
-
-
79956037110
-
Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam
-
Z. Wang, H. Tsukasa, S. Katsuhiro, S. Hiroyasu, K. Naoko, “Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam”, Applied Physics Letters, Vol. 80, No. 2, pp. 246-248, 2002.
-
(2002)
Applied Physics Letters
, vol.80
, Issue.2
, pp. 246-248
-
-
Wang, Z.1
Tsukasa, H.2
Katsuhiro, S.3
Hiroyasu, S.4
Naoko, K.5
-
19
-
-
77949372117
-
Electron holography for analysis of deep submicron devices: Present status and challenges
-
January
-
N. Ikarashi, A. Toda, K. Uejima, K. Yako, T. Yamamoto, M. Hane, and H. Sato, “Electron holography for analysis of deep submicron devices: Present status and challenges”, J. Vac. Sci. Technol. B, Vol. 28, No. 1, pp. C1D5-C1D10, January 2010.
-
(2010)
J. Vac. Sci. Technol. B
, vol.28
, Issue.1
, pp. C1D5-C1D10
-
-
Ikarashi, N.1
Toda, A.2
Uejima, K.3
Yako, K.4
Yamamoto, T.5
Hane, M.6
Sato, H.7
-
20
-
-
77954286141
-
Two-dimensional doping profiling study of boron-based low energy ion implantations by electron holography
-
Shanghai, China, May 10-11, Proceedings
-
th International Workshop on Junction Technology (IEEE IWJT2010), Shanghai, China, May 10-11, 2010, Proceedings, p.160.
-
(2010)
th International Workshop on Junction Technology (IEEE IWJT2010)
, pp. 160
-
-
Qin, S.1
Wang, Z.2
Hu, Y.J.3
McTeer, A.4
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