Study of damage engineeringquantitative scatter defect measurements of ultralow energy implantation doping using the continuous anodic oxidation technique/differential hall effect

IEEE Transactions on Plasma Science

Volumn 40, Issue 3 PART 2, 2012, Pages 877-882

  Qin, Shu ^a   McTeer, Allen ^a   Hu, Yongjun Jeff ^a   Prussin, Si ^b   Reyes, Jason ^b  

^a MICRON TECHNOLOGY INC   (United States)

^b UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carrier distribution; continuous anodic oxidation technique differential Hall effect (CAOT DHE) method; mobility; plasma doping (PLAD); scatter defects; ultralow energy (ULE) implants

Indexed keywords

ATOMIC MASS; CARRIER DISTRIBUTIONS; CONTINUOUS ANODIC OXIDATION TECHNIQUE/DIFFERENTIAL HALL EFFECT (CAOT/DHE) METHOD; DEFECT CONCENTRATIONS; DIFFERENT MECHANISMS; IMPLANTATION DOPING; IN-SITU; ION SPECIES; PLASMA DOPING; PLASMA DOPING (PLAD); SI SURFACES; ULTRALOW ENERGY;

ANODIC OXIDATION; CARRIER MOBILITY; HALL EFFECT; ION BOMBARDMENT;

SEMICONDUCTOR DOPING;

EID: 84862801143     PISSN: 00933813     EISSN: None     Source Type: Journal    
DOI: 10.1109/TPS.2011.2180403     Document Type: Article

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