Two-dimensional cross-sectional doping profiling of boron-based low energy high dose ion implantations using electron holography technique

IWJT-2010: Extended Abstracts - 2010 International Workshop on Junction Technology

Volumn , Issue , 2010, Pages 160-165

  Qin, Shu ^a   Wang, Zhouguang ^a   Li, Du ^a   Hu, Y Jeff ^a   McTeer, Allen ^a   Burke, Rob ^a   Guha, Jaydip ^a  

^a MICRON TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

D ELECTRONS; DEVICE PARAMETERS; DOPANT PROFILE; DOPING PROFILES; GOOD CORRELATIONS; HIGH-DOSE ION IMPLANTATION; JUNCTION DEPTH; LOW ENERGIES; PLASMA DOPING; THERMAL BUDGET;

BORON; BORON COMPOUNDS; ELECTRON HOLOGRAPHY; ELECTRONS; ION IMPLANTATION; TWO DIMENSIONAL;

DOPING (ADDITIVES);

EID: 77954286141     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWJT.2010.5474915     Document Type: Conference Paper

References (11)

1. International Technology Roadmap for Semiconductor 2009 - Frond End Processes, http://public.itrs.net/Links/2009ITRS/Home2009.htm, Semiconductor Industry Association, 2009.
2. A. Tonomura, "Applications of electron holography", Rev. Mod. Phys., Vol.59, No.3, pp. 639-669, 1987.
3. W. D. Rau, P. Schwander, F. H. Baumann, et al., "Two-Dimensional Mapping of the Electrostatic Potential in Transistors by Electron Holography", Phys. Rev. Lett., Vol.82, No.12, pp. 2614-2617, 1999.
4. Z. Wang, H. Tsukasa, S. Katsuhiro, et al., "Electron holographic characterization of electrostatic potential distributions in a transistor sample fabricated by focused ion beam", Applied Physics Letters, Vol.80, No.2, pp. 246-248, 2002.
5. N. Ikarashi, A. Toda, K. Uejima, et al., "Electron holography for analysis of deep submicron devices: Present status and challenges", J. Vac. Sci. Technol. B, Vol.28, No.1, pp. C1D5-C1D10, January 2010.
6. P. Eyben, T. Janssens and W. Vandervorst, "Scanning spreading resistance microscopy (SSRM) 2d carrier profiling for ultra-shallow junction characterization in deep-submicron technologies", Mat. Sci. Eng. B, Vol.124-125, pp. 45-53, December 2005.
7. P. Eyben, W. Vandervorst, D. Alvarez, et al., Scanning Probe Microscopy Electrical and Electromechanical Phenomena at the Nanoscale, New York: Springer, 2007, pp. 31-87.
8. P. Eyben, F. Clemente, K. Vanstreels, et al.,"Analysis and Modeling of the HV-SRRM Nanocontact on Silicon", International Workshop on INSIGHT in Semiconductor Device Fabrication, Metrology, and Modeling, Napa, CA, USA, April 26-29, 2009, Proceedings, pp.402-410.
9. Sentaurus Process Simulation (SYNOPSYS) -www.synopsys.com.
10. S. Qin, K. Zhuang, S. Lu, et al., "SIMS/ARXPS - A New Technique of Retained Dopant Dose and Profile Measurement of Ultra-Low Energy Doping Processes", IEEE Trans. on Plasma Science, vol.37, no.1, pp. 139-145, January 2009.
11. S. Qin and A. McTeer, "Characterization and optimization of a plasma doping process using a pulsed RF-excited continuous B2H6 plasma system", Surface and Coatings Technology, Vol.201, No.15, pp. 6759-6767, April 2007.