Plasma-enhanced atomic layer deposition of Co using Co(MeCp)2 precursor

Journal of Energy Chemistry

Volumn 22, Issue 3, 2013, Pages 403-407

  Park, Jusang ^a   Lee, Han Bo Ram ^b   Kim, Doyoung ^c   Yoon, Jaehong ^a   Lansalot, Clement ^d   Gatineau, Julien ^d   Chevrel, Henri ^d   Kim, Hyungjun ^a  

^a Yonsei University   (South Korea)

^b SolarLight Ltd   (South Korea)

^c Ulsan College   (South Korea)

^d AIR LIQUIDE   (France)

Author keywords

Metal organic precursors; Metal thin films; PE ALD; Th ALD cobalt

Indexed keywords

ATOMIC LAYER DEPOSITION; DEPOSITION; METALS; ORGANOMETALLICS; TEMPERATURE; THIN FILMS;

GROWTH CHARACTERISTIC; LOW GROWTH TEMPERATURE; LOW TEMPERATURE GROWTH; METAL ORGANIC PRECURSORS; METAL THIN FILM; MICRO-STRUCTURAL PROPERTIES; PLASMA-ENHANCED ATOMIC LAYER DEPOSITION; SUBSTRATE TEMPERATURE;

COBALT;

EID: 84879868413     PISSN: 20954956     EISSN: None     Source Type: Journal    
DOI: 10.1016/S2095-4956(13)60052-2     Document Type: Article

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