Effect of a Ge interlayer on the high-temperature behavior of NiSi films

Journal of Applied Physics

Volumn 96, Issue 11, 2004, Pages 6928-6930

  He, Y ^a   Liu, X L ^a   Feng, J Y ^a   Wu, Q L ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

FREE ENERGY; NICKEL COMPOUNDS; NUCLEATION; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; TEMPERATURE DISTRIBUTION; X RAY DIFFRACTION;

ELECTRICAL PROPERTIES; LINEWIDTHS; SILICIDES; VACUUM CHAMBER;

GERMANIUM;

EID: 31944434456     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1810632     Document Type: Article

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