Excimer laser-induced Ti silicidation to eliminate the fine-line effect for integrated circuit device fabrication

Journal of the Electrochemical Society

Volumn 149, Issue 11, 2002, Pages

  Chen, S Y ^a   Shen, Z X ^a   Xu, S Y ^a   Ong, C K ^a   See, A K ^b   Chan, L H ^b  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b CHARTERED SEMICONDUCTOR MANUFACTURING LTD   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

EXCIMER LASERS; LASER PULSES; LOW TEMPERATURE OPERATIONS; PHASE TRANSITIONS; RAMAN SPECTROSCOPY; RAPID THERMAL ANNEALING; SYNTHESIS (CHEMICAL); TITANIUM COMPOUNDS; X RAY DIFFRACTION ANALYSIS;

INTEGRATED CIRCUIT DEVICE FABRICATION; LASER THERMAL PROCESSING; LOW TEMPERATURE TREATMENT; TITANIUM SILICIDATION;

INTEGRATED CIRCUIT MANUFACTURE;

EID: 0036863017     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1510843     Document Type: Article

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