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Volumn 45, Issue 11, 1998, Pages 2312-2318

A new cobalt salicide technology for 0.15-μm CMOS devices

Author keywords

Cobalt; CoSi2; High temperature sputtering; In situ vacuum annealing; Salicide; Suicide

Indexed keywords

ANNEALING; CMOS INTEGRATED CIRCUITS; COBALT COMPOUNDS; ELECTRODES; SEMICONDUCTING FILMS; SEMICONDUCTOR JUNCTIONS; SPUTTER DEPOSITION; THERMODYNAMIC STABILITY;

EID: 0032202849     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.726647     Document Type: Article
Times cited : (15)

References (10)
  • 4
    • 0029482954 scopus 로고
    • Sub-quarter micron titanium salicide technology with in situ silicidation using high-temperature sputtering
    • K. Fujii, K. Kikuta, and T. Kikkawa, "Sub-quarter micron titanium salicide technology with in situ silicidation using high-temperature sputtering," in IEEE Symp. VLSI Tech. Dig., 1995, pp. 57-58.
    • (1995) IEEE Symp. VLSI Tech. Dig. , pp. 57-58
    • Fujii, K.1    Kikuta, K.2    Kikkawa, T.3
  • 5
    • 0343233759 scopus 로고
    • A manufacturante process for the formation of self-aligned cobalt suicide in a sub-micrometer CMOS technology
    • A. C. Bert and V. Bolkhovski, "A manufacturante process for the formation of self-aligned cobalt suicide in a sub-micrometer CMOS technology," in IEEE Proc. VMIC, 1992, pp. 267-273.
    • (1992) IEEE Proc. VMIC , pp. 267-273
    • Bert, A.C.1    Bolkhovski, V.2
  • 9
    • 0029520356 scopus 로고
    • A new cobalt salicide technology for 0.15 μm CMOS using high-temperature sputtering and in situ vacuum annealing
    • K. Inoue, K. Mikagi, H. Abiko, and T. Kikkawa, "A new cobalt salicide technology for 0.15 μm CMOS using high-temperature sputtering and in situ vacuum annealing," in IEDM Tech. Dig., 1995, pp. 445-448.
    • (1995) IEDM Tech. Dig. , pp. 445-448
    • Inoue, K.1    Mikagi, K.2    Abiko, H.3    Kikkawa, T.4
  • 10
    • 0031332418 scopus 로고    scopus 로고
    • Epitaxial cobalt suicide formation using high-temperature sputtering and vacuum annealing
    • K. Inoue, R. Tung, K. Mikagi, S. Chikaki, and T. Kikkawa, "Epitaxial cobalt suicide formation using high-temperature sputtering and vacuum annealing," in Proc. Mat. Res. Soc. Symp. Proc., 1997, vol. 441, pp. 435-440.
    • (1997) Proc. Mat. Res. Soc. Symp. Proc. , vol.441 , pp. 435-440
    • Inoue, K.1    Tung, R.2    Mikagi, K.3    Chikaki, S.4    Kikkawa, T.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.