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Volumn 102, Issue 25, 2013, Pages

Feasibility of atomic layer etching of polymer material based on sequential O2 exposure and Ar low-pressure plasma-etching

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER ETCHING; ETCHING CHAMBER; ETCHING STEP; POLYMER MATERIALS; POLYSTYRENE POLYMERS; REACTIVE LAYERS; SELF-LIMITED ETCHING; SEQUENTIAL DEPOSITION;

EID: 84879850077     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4812750     Document Type: Article
Times cited : (32)

References (24)
  • 1
    • 0344667722 scopus 로고    scopus 로고
    • See, for instance, ; 10.1002/anie.v42:45
    • See, for instance, M. Leskela and M. Ritala, Angew. Chem., Int. Ed. 42, 5548 (2003); 10.1002/anie.v42:45
    • (2003) Angew. Chem., Int. Ed. , vol.42 , pp. 5548
    • Leskela, M.1    Ritala, M.2
  • 3
    • 79954583051 scopus 로고    scopus 로고
    • 10.1088/0022-3727/44/17/174011
    • N. Marchack and J. P. Chang, J. Phys. D: Appl. Phys. 44, (17), 174011 (2011). 10.1088/0022-3727/44/17/174011
    • (2011) J. Phys. D: Appl. Phys. , vol.44 , Issue.17 , pp. 174011
    • Marchack, N.1    Chang, J.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.