Full-scale characterization of UVLED AlxGa1-xN nanowires via advanced electron microscopy

ACS Nano

Volumn 7, Issue 6, 2013, Pages 5045-5051

  Phillips, Patrick J ^a   Carnevale, Santino D ^b   Kumar, Rajan ^c   Myers, Roberto C ^b   Klie, Robert F ^a  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b Ohio State University   (United States)

^c Northwestern University   (United States)

Author keywords

EDX; EELS; nanowires; nitrides; STEM

Indexed keywords

CHARACTERIZATION TECHNIQUES; III-NITRIDE SEMICONDUCTORS; NANOWIRE GROWTH; OPTOELECTRONIC APPLICATIONS; SCANNING TRANSMISSION ELECTRON MICROSCOPY; STEM; STRUCTURAL DATA; ULTRAVIOLET LIGHT-EMITTING DIODES;

ELECTRON ENERGY LOSS SPECTROSCOPY; ELECTRONIC PROPERTIES; ENERGY DISPERSIVE SPECTROSCOPY; LIGHT EMITTING DIODES; NITRIDES; SEMICONDUCTOR DOPING; TRANSMISSION ELECTRON MICROSCOPY;

NANOWIRES;

EID: 84879672009     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn4021407     Document Type: Article

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