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Volumn 84, Issue 7, 2011, Pages

Luminescence related to high density of Mg-induced stacking faults in homoepitaxially grown GaN

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Indexed keywords


EID: 80052430788     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.84.075324     Document Type: Article
Times cited : (34)

References (22)
  • 18
    • 34250612314 scopus 로고    scopus 로고
    • Cathodoluminescence spectroscopy of epitaxial-lateral-overgrown nonpolar (11-20) and semipolar (11-22) GaN in relation to microstructural characterization
    • DOI 10.1063/1.2740361
    • T. Gühne, Z. Bougrioua, P. Vennéguès, M. Leroux, and M. Albrecht, J. Appl. Phys. JAPIAU 0021-8979 10.1063/1.2740361 101, 113101 (2007). (Pubitemid 46934858)
    • (2007) Journal of Applied Physics , vol.101 , Issue.11 , pp. 113101
    • Guhne, T.1    Bougrioua, Z.2    Vennegues, P.3    Leroux, M.4    Albrecht, M.5
  • 21
    • 0000889459 scopus 로고    scopus 로고
    • PRBMDO 1098-0121 10.1103/PhysRevB.57.R15052
    • C. Stampfl and C. G. Van de Walle, Phys. Rev. B PRBMDO 1098-0121 10.1103/PhysRevB.57.R15052 57, R15052 (1998).
    • (1998) Phys. Rev. B , vol.57 , pp. 15052
    • Stampfl, C.1    Van De Walle, C.G.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.