Cell libraries for robust low-voltage operation in nanometer technologies

Solid-State Electronics

Volumn 84, Issue , 2013, Pages 132-141

  Gemmeke, Tobias ^a   Ashouei, Maryam ^a   Liu, Bo ^a,b   Meixner, Michael ^c   Noll, Tobias G ^c   De Groot, Harmke ^a  

^a HOLST CENTRE   (Netherlands)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c RWTH AACHEN UNIVERSITY   (Germany)

Author keywords

Library pruning; Random fluctuations; Reliability; Standard cell design; Static noise margin; Sub threshold logic

Indexed keywords

ELECTRIC BATTERIES; ENERGY CONSERVATION; ENERGY EFFICIENCY; RELIABILITY; SENSOR NODES; VOLTAGE SCALING;

AGGRESSIVE VOLTAGE SCALING; AUTONOMOUS OPERATIONS; RANDOM FLUCTUATION; STANDARD CELL DESIGN; STATIC NOISE MARGIN; SUB-THRESHOLD REGIONS; TOTAL POWER DISSIPATION; TRANSISTOR GEOMETRIES;

THRESHOLD VOLTAGE;

EID: 84879501282     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.02.006     Document Type: Article

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